DTC115GKAT146

DC Current Gain (hFE) (Min) @ Ic, Vce:	82 @ 5mA, 5V
Base Part Number:	DTC115
Supplier Device Package:	SMT3
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Series:	--
Resistor - Base (R1):	100 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction of DTC115GKAT146

The DTC115GKAT146 is a general purpose pre-biased, single NPN bipolar junction transistor (BJT). It is a voltage controlled device with the maximum collector current of 120mA. This transistor is available in SOT-23 case. It has a wide variety of applications while supporting a wide current range, which makes it very useful in a number of applications.

Features of DTC115GKAT146

The features of the DTC115GKAT146 includes:

• Low collector-emitter saturation voltage
• Low collector capacitance
• Maximum collector current : 120mA
• Pb-free package options available
• Maximum junction temperature of 150°C
• Wide operating temperature range from −50° to 150°C

Applications of DTC115GKAT146

The DTC115GKAT146 has wide range of applications such as:

• Integrated circuits
• Amplification and switching
• General purpose applications
• Switchmode supply control
• High speed switching
• Motor control
• Low voltage battery applications
• High frequency amplification

Working Principle of DTC115GKAT146

The working principle of DTC115GKAT146 is based on the principle of bias voltage control. It works on the principle that the collector-base junction is forward biased and the emitter-base junction is reverse biased. The collector-base voltage is greater than the base-emitter voltage, thus, allowing the current to flow from the emitter to the collector. The collector current is controlled by varying the base current. As the base current increases, the collector current also increases. Hence, the device can be used to switch or amplify a signal depending upon the voltages applied to the base, emitter and collector terminals.The DTC115GKAT146 is biased in such a way that the output is high in the absence of any input signal and low when an input signal is applied. This process makes the device more reliable and efficient as it reduces the power consumption, increases the life of the mosfet as well as reduces the amount of heat generated by it.Another advantage of using DTC115GKAT146 is that it provides high efficiency and fast switching times since the device is fast at switching from low to high or vice versa. This makes the device suitable for power control applications such as motor control and switchmode supplies.

Conclusion

The DTC115GKAT146 is a general purpose pre-biased, single NPN bipolar junction transistor (BJT). It is available in SOT-23 package and has a wide variety of applications. It can be used in integrated circuits, amplification and switching, motor control and switchmode supplies. It works on the principle of bias voltage control by allowing the current to flow from the emitter to the collector when the collector-base voltage is greater than the base-emitter voltage. The device provides high efficiency and fast switching times, thus making it suitable for power control applications.

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