DTC123JCAT116 Allicdata Electronics
Allicdata Part #:

DTC123JCAT116TR-ND

Manufacturer Part#:

DTC123JCAT116

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN 100MA 50V DIGITAL TRANSISTOR
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC123JCAT116 datasheetDTC123JCAT116 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02749
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Description

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The DTC123JCT116 is a high-voltage and high-speed transistor that is part of the extended family of transistors from ON Semiconductor. It is largely used in switch mode power supplies, where its high switching speed, high breakdown voltage and low ON resistance makes it suitable for providing fast power control. Due to its high sensitivity to stress ratings, however, it needs to be used carefully. This article will discuss the DTC123JCT116 application field and working principle in detail.

Types of Transistors

Transistors are electronic semiconductor devices that can amplify signals, switch current on and off, and act as signal modifiers. They come in two main varieties: bipolar transistors and field-effect transistors (FETs). Bipolar transistors, or BJTs, are composed of either n-type and p-type semiconductor material arranged in three terminals. The terminals are called the emitter (E), the base (B), and the collector (C). Field-effect transistors, or FETs, consist of a channel of n-type and p-type material through which current flows between two terminals, the source (S) and the drain (D).

DTC123JCT116 Application Field and Working Principle

The DTC123JCT116 belongs to the family of transistors called single, pre-biased BJTs, meaning that it has two p-type and one n-type layers in its construction, and that it is biased or “pre-driven” in such a way that it can be used in a variety of applications.

This type of transistor is best used in applications with fast switching speeds and applications that require high reliability, such as switch mode power supplies. It is often used in such applications because of its high breakdown voltage and low ON resistance. The breakdown voltage is the voltage at which the device begins to conduct current and the ON resistance is the amount of resistance the transistor has when conducting current.

The operating principle of the DTC123JCT116 is based on the switching of the two terminals, the base and the collector. When a lower voltage is applied to the base, the current is diverted from the base to the collector, causing the transistor to be switched “on”, allowing current to flow. When a higher voltage is applied, the current is diverted back to the base, causing the transistor to be switched off, preventing current from flowing.

Due to its high switching speed and low ON resistance, this transistor offers high efficiency in switch mode power supplies, making it an ideal choice for applications that require fast switching times. Despite its high sensitivity to stress ratings, the DTC123JCT116 has demonstrated reliability and stability in numerous applications, making it a reliable choice for many power applications.

Conclusion

The DTC123JCT116 is a single, pre-biased BJT and is part of the extended family of transistors from ON Semiconductor. It is largely used in applications with fast switching speeds, such as switch mode power supplies, where its high breakdown voltage and low ON resistance makes it suitable for providing fast power control. Its operating principle involves switching the two terminals, the base and the collector, and it offers reliability in numerous applications due to its high switching speed and low ON resistance.

The specific data is subject to PDF, and the above content is for reference

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