DTC123TM3T5G Allicdata Electronics
Allicdata Part #:

DTC123TM3T5G-ND

Manufacturer Part#:

DTC123TM3T5G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 0.26W SOT723
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC123TM3T5G datasheetDTC123TM3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.02911
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Description

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The DTC123TM3T5G is a pre-biased, single-transistor bipolar transistor that can be used for various applications. It is usually used in power conditioning and control operations, as well as in various high-speed, high-current and low-power applications. This article explores the application field and working principle of the DTC123TM3T5G.

The DTC123TM3T5G is an NPN silicon-based transistor in a TO-226AA package. It has a maximum collector-emitter voltage (VCE) of 55V, a current rating of 3A and an operating temperature range of -55 to +150 degrees Celsius. The transistor is equipped with a pre-biased resistor network, which allows it to be used in a wide range of applic­ations. For instance, the pre-biased resistor network makes it suitable for designing high-voltage and high-current switch operations, as well as for making low-power, low-noise amplifier circuits.

The DTC123TM3T5G has many applications in power conditioning and control operations. It can be used as an amplifier in power supplies and regulators, as a switch in motor control circuits and as a booster in low-power switching amplifiers. Its pre-biased resistor network is designed to provide enhanced performance in these applications.

The DTC123TM3T5G is also commonly used in high-speed, high-current and low-power applications. For example, it can be used as a switch in low-power switching amplifiers, and it is well-suited for speed and current control of solenoid actuators, stepper motors and other devices. The pre-biased resistor network of the transistor ensures precise control of the switching transients in these applications.

The working principle of the DTC123TM3T5G is based on the change in the current flow between the collector and emitter that occurs when the base voltage is changed. When voltage is applied to the base, a current flow is created in the transistor. This current flow from the collector to the emitter can be controlled by changing the voltage applied to the base. By adjusting the voltage at the base, the DTC123TM3T5G can be used for various tasks, such as amplifying signals, controlling motors, and providing current to solenoid actuators.

To summarise, the DTC123TM3T5G is a pre-biased single-transistor bipolar transistor that can be used in power conditioning and control operations, as well as in high-speed, high-current and low-power applications. It works by controlling the current flow from the collector to the emitter when the base voltage is adjusted. The DTC123TM3T5G is a versatile transistor that can be used for various tasks, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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