DTC123YCAHZGT116

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DTC123YCAHZGT116 is a single, pre-biased bipolar (BJT) transistor, typically used in medium to high-power applications. A single, pre-biased transistor is one in which both the collector and base connections are reverse-biased during operation, with the pre-bias determining the base current. The DTC123YCAHZGT116 can handle up to 200 watts of power.

Transistors are electronic components that are used to control and amplify electronic signals. They are composed of three regions, the emitter, base, and collector, which are made of semiconductor material. The emitter is the input end of the transistor, the base is the control end, and the collector is the output end. Transistors can amplify current or voltage, depending on their application.

The DTC123YCAHZGT116 is an NPN transistor, meaning that its base is positive with respect to its emitter, and the collector is positive with respect to the base. NPN transistors are used in circuits to amplify and switch electronic signals, and can provide pre-biased input conditions to prevent damage to certain components.

The DTC123YCAHZGT116 is designed to amplify and switch medium power levels with a wide gain range. It features excellent switching characteristics, with a leakage current of only 5 milliamps at a rating of 25 Volts. The transistor\'s maximum collector current is up to 4 amps, which allows it to handle high power applications with ease. It has a maximum power dissipation of 200 watts and a maximum operating frequency of 200 MHz.

The DTC123YCAHZGT116 is typically used in a variety of medium to high-power applications, including motor control, air conditioning systems, and industrial automation. It can also be used in sensing, switching and power supply applications, and is well-suited for automated production line processes.

The working principle of the DTC123YCAHZGT116 is based on “Theory of Electron Flow in Semiconductors.” This theory states that the current which flows between the base and the emitter in NPN transistors is due to the movement of electrons from the emitter to the collector. The current is controlled by the base, and is amplified by the transistor’s amplification factor, known as current gain, or hFE. This amplification factor is determined by the amount of reverse bias applied to the base, which is why it is pre-biased.

The DTC123YCAHZGT116 is an excellent choice for high-power applications, thanks to its robust construction and high current gain. It is also well-suited for a variety of medium- to high-power applications, including motor control, automation assembly processes, and air conditioning systems. It can handle up to 200 watts of power, and its maximum operating frequency is 200 MHz.

The specific data is subject to PDF, and the above content is for reference