Allicdata Part #: | DTC124ESATP-ND |
Manufacturer Part#: |
DTC124ESATP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW SPT |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC124ESATP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | DTC124 |
Supplier Device Package: | SPT |
Package / Case: | SC-72 Formed Leads |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 30mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Box (TB) |
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The DTC124ESATP is a single, pre-biased Bipolar Junction Transistor (BJT). It is a 4-pin surface-mounted device consisting of two layers of semiconductor material (n-type and p-type) and two regions (emitter and collector). It is designed to be used as an amplifier, switch, or rectifier in many electronic circuits, and its power output is typically rated between 0.5 watts to 2 watts.
The DTC124ESATP has a wide range of applications due to its adjustable pre-biased operation, which allows for improved linearity and higher gain over other BJTs. It can be used for high frequency switching, RF amplifiers, and voltage regulators, as well as low power output stages such as audio preamps, guitar amplifiers, and FM receivers. The extended lifetime of the device allows for longer use in similar applications.
The working principle of the DTC124ESATP can be broken down into a few basic stages. It begins with a current source, usually two emitter resistors, connected to a base-emitter diode. When a voltage is applied to the base of the transistor, it allows the electrons to flow from the emitter to the collector, at which time the device is considered to be ‘on’.
Conversely, when the voltage drops below the base-emitter voltage, the electrons stop flowing from the emitter to the collector and the device is considered to be ‘off’. The current between the emitter and the collector is controlled by the voltage applied to the base, and the gain of the device is directly proportional to this current.
When a voltage is applied to the base of the DTC124ESATP, the current flowing into the base region is limited by the emitter’s resistance, which in turn limits the device’s output power. The pre-biased operation of this transistor creates a self-regulating circuit in which the current is controlled by the applied voltage, making it an ideal device for use in low-power, high-frequency switching applications.
The DTC124ESATP’s ability to function as a switch, amplifier, or rectifier makes it an ideal device for use in many electronic circuits. Its adjustable, pre-biased operation provides improved linearity and higher gain over similar bipolar junction transistors, making it a reliable and versatile solution for many design challenges.
The specific data is subject to PDF, and the above content is for reference
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