DTC124EUBHZGTL Allicdata Electronics
Allicdata Part #:

DTC124EUBHZGTLTR-ND

Manufacturer Part#:

DTC124EUBHZGTL

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN 100MA 50V DIGITAL TRANSISTOR
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC124EUBHZGTL datasheetDTC124EUBHZGTL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02024
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F
Description

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The DTC124EUBHZGTL is a single, pre-biased, bipolar junction transistor (BJT). It is a widely used component in electronics and is found in many types of applications. This article will discuss the application field and working principle of the DTC124EUBHZGTL.

The DTC124EUBHZGTL is a general purpose transistor that can be used for switching or amplification. It is available in a variety of packages for various applications. It is often used in audio or video circuits, or in amplifiers or receivers. It is also suitable for use in temperature control circuits, for use in motor controls and for RF amplifiers.

The DTC124EUBHZGTL is designed to be operated in the forward-bias condition and has two p-type and two n-type layers. It is also pre-biased so that the bias current is already set. This feature simplifies the application design. The device is also relatively easy to drive. This makes it a good choice for low-power applications.

The basic operating principle of the DTC124EUBHZGTL is to control the current flow between two p-type and two n-type layers. When an external voltage is applied across the base and the emitter, the holes (p-type regions) and the electrons (n-type layers) combine. This produces a large current flow between the collector and the emitter, which is known as the collector current. The amount of current flow is usually controlled by the base current, which is supplied by the voltage source.

The DTC124EUBHZGTL also has good linearity, meaning that it can be used in high speed applications such as digital logic circuits. It also has good gain and saturation characteristics, making it ideal for multiple applications. In addition, the DTC124EUBHZGTL is relatively robust and can handle high temperature and high frequency operations.

The DTC124EUBHZGTL is an ideal choice for a variety of applications. It is suitable for use in audio or video circuits, RF amplifiers, motor controls and other temperature control circuits. The device is also relatively easy to drive so it is a good choice for low-power applications. The device’s pre-biased design simplifies the design process and its good linearity makes it suitable for high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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