Allicdata Part #: | DTC143ECAHZGT116TR-ND |
Manufacturer Part#: |
DTC143ECAHZGT116 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 100MA 50V DIGITAL TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC143ECAHZGT116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.01855 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased + Diode |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 350mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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A DTC143ECAHZGT116 is a single pre-biased NPN Bipolar Transistor (BJT). This particular device can be used in a variety of applications including logic, small signal switching and amplifier stages.
Application Field
This device is used in a broad array of analog and digital applications such as small signal switching and amplifier stages. Its high gain and low voltage saturation output characteristics make it particularly suitable for powering small motor controllers and microprocessors. It’s also a good option for driving LEDs, LCDs and other small loads. Furthermore, the low capacitance output coupled with the high voltage ratings make it suitable for high frequency radio frequency applications.
Working Principle
Like all NPN Bipolar Transistors, the DTC143ECAHZGT116 is a three-terminal device consisting of a collector, base and emitter. Over the course of operation, when a current is passed through the base electrode, it causes the electrons to form into a hole carrier in the surrounding valence band. This charge carrier then becomes trapped by a potential barrier as it moves from the base to the emitter, releasing energy in the process, that results in a current flow from emitter to collector. The exact amount of current or gain produced is based on the amount of current that is driven through the base and the geometry of the transistor.
This particular device is pre-biased, meaning that it already has a base resistor in place, providing the user with greater control over the forward bias current and allowing it to be used in a variety of applications. Furthermore, the high voltage breakdown ratings and low capacitance output also make it suitable for higher frequency applications.
Enhanced Features
The DTC143ECAHZGT116 also provides enhanced features for optimizing its performance. One of the most noticeable is the reduced output capacitance that is provided by the NPN design. This eliminates the need for additional decoupling capacitors in many common applications and helps to take the guesswork out of the design process. Additionally, the device also has internal compensation with an adjustable gain to optimize the response. This is helpful in balancing gain with throughput in order to provide a desirable combination of performance and efficiency in sensitive applications.
Conclusion
The DTC143ECAHZGT116 is an excellent choice for a variety of analog and digital applications due to its pre-biased design and enhanced features. Its high gain and low voltage saturation output characteristics make it suitable for driving small loads and its high voltage breakdown rating and low capacitance output make it well-suited for high frequency applications as well. Furthermore, its internal compensation with an adjustable gain helps to optimize response and performance.
The specific data is subject to PDF, and the above content is for reference
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