DTC143XCAHZGT116 Allicdata Electronics
Allicdata Part #:

DTC143XCAHZGT116TR-ND

Manufacturer Part#:

DTC143XCAHZGT116

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN 100MA 50V DIGITAL TRANSISTOR
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC143XCAHZGT116 datasheetDTC143XCAHZGT116 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02024
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Description

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DTC143XCAHZGT116 is a single, pre-biased, bipolar transistor. It is a type of transistor used for switching operations, amplifying signals and controlling the current that a circuit needs. This transistor has an emitter-base voltage of 5.0 volts and an emitter current of 200mA, which makes it well-suited for use with 3.3 volts and higher logic levels.

These types of transistors are also known as BJTs, which stands for bipolar junction transistors. In essence, they are small devices that act as a switch that can be used to amplify or control a current. As with any type of transistor, they are made up of two junctions – an emitter junction and a base junction. When an electrical current is applied to the emitter junction, it then controls the flow of current to the collector.

One of the main applications for DTC143XCAHZGT116 is when it is necessary to control the power output from a circuit or switch between multiple states in a circuit. This device can also be used for interface applications such as low-power logic gates and memory circuits. The transistor also finds use in linear applications such as amplifiers, logic level shifters and high-frequency chopper circuits.

When discussing the working principle of DTC143XCAHZGT116, it is important to understand its behavior in relation to the emitter and base terminal voltages. When voltage is applied to the emitter, the current that flows between the emitter and the base is proportional to the voltage applied. This is known as the forward active region, in which the collector current is proportional to the input voltage and is said to be in its saturation region.

When voltage is applied to the base, the current that flows between the emitter and base is inversely proportional to the voltage applied. This is known as the reverse active region, in which the collector current is inversely proportional to the input voltage. In this region of operation, the device is considered to be in its cutoff region.

Finally, DTC143XCAHZGT116 can also be used for inverting applications such as ring oscillators and voltage comparators. In inverting applications, the device is used to change the input signal from the base to the opposite output on the collector. This is due to the transistor’s ability to invert the current flow from the base and collector junctions, allowing the device to act as a switch.

In conclusion, DTC143XCAHZGT116 is a single pre-biased bipolar transistor which can be used as an amplifier or switch, depending on the application. It has an emitter-base voltage of 5.0 volts and emitter current of 200mA, making it well-suited for use with 3.3 volts and higher logic levels. It can be used for interface applications such as low-power logic gates and memory circuits, as well as in linear and inverting applications.

The specific data is subject to PDF, and the above content is for reference

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