DTC143XCAT116

Series:	*
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SST3

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Introduction

The DTC143XCAT116 transistor is a single pre-biased bipolar junction transistor (BJT) designed for use in general-purpose, high-frequency and low-power applications. It is a very useful device for radio frequency applications, where the pre-biased characteristics of the device provide a high linearity and low distortion. The device can be used in a wide range of applications which require high frequency operation at low power levels, such as power amplifiers, switches, and other high-frequency circuits. This article will discuss the application field and working principle of the DTC143XCAT116 transistor.

Application Field

The DTC143XCAT116 transistor is a versatile device which can be used in a variety of applications. One of the main applications for the DTC143XCAT116 is high-frequency radio frequency (RF) power amplifiers, where the device’s pre-biased characteristics allow for a high linearity and low distortion. The device can also be used in digital and analog switch circuits, which require high switching speeds and low power consumption. Furthermore, the device can also be used in audio and filter circuits, where its low noise characteristics allow for high audio quality at low power levels.

Working Principle

The DTC143XCAT116 transistor operates by using the principles of bipolar junction transistor (BJT) technology. A BJT is a current-controlled device, which consists of two PN junctions connected back-to-back. The current between these two PN junctions is determined by the voltage applied to the base of the transistor. When the base voltage is increased, a larger current begins to flow through the device, and as the base voltage is decreased, the current between the PN junctions decreases. The pre-biased characteristics of the DTC143XCAT116 transistor are achieved by applying a reverse bias voltage to the base of the device. This allows for a low-noise operation and high linearity, as well as low power consumption. The device is configured such that the current gain is relatively low, and that the reverse bias voltage does not exceed the breakdown voltage of the device.

Conclusion

The DTC143XCAT116 transistor is a single pre-biased bipolar junction transistor (BJT) designed for use in general-purpose, high-frequency and low-power applications. The device’s pre-biased characteristics provide a high linearity and low distortion, which makes it very useful for RF applications. The device can be used in a wide range of applications, such as power amplifiers, switches, and other high-frequency circuits. It operates by using the principles of bipolar junction transistor technology, and the pre-biased characteristics of the device are achieved by applying a reverse bias voltage to the base of the device.

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