DTC143ZU3T106

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max):	100mA
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	UMT3

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Application Field of DTC143ZU3T106

The DTC143ZU3T106 bipolar NPN transistor is manufactured by Seiko Instruments, and is a single, pre-biased, high-speed transistor. This type of transistor is used for switching, amplification, and oscillator applications, providing greater performance and reliability than a simple NPN transistor. Specifically, the DTC143ZU3T106 can be used to drive high-speed switching, operate in high current and power applications, and is able to provide high operating temperature and voltage ratings.

Features of DTC143ZU3T106

The key features of the DTC143ZU3T106 are its high-speed switching performance, low base-emitter voltage, and low saturation voltage. It is also rated for a maximum collector current of 1A and a maximum collector-emitter voltage of VCE = 30V. Additionally, the DTC143ZU3T106 has a wide operating temperature range of -55 to +150°C and can remain stable under a wide range of currents and voltages.

Working Principle of DTC143ZU3T106

The DTC143ZU3T106 uses a PNPN bipolar junction transistor (BJT) structure to achieve an NPN output. In this type of transistor, the base-emitter junction is biased with a negative voltage. This creates a current path between the emitter and collector, allowing current to flow from the emitter to the collector. The flow of current is modulated by the base-emitter junction, which increases or decreases the flow of current as the voltage at the base increases or decreases. Much like other types of transistors, the DTC143ZU3T106 functions by controlling the flow of current through the emitter-collector junction. This is done by applying a voltage to the base of the transistor, which increases or decreases the current flow through the emitter-collector junction. The amount of current that can flow through the junction is set by the current gain of the transistor, which is also known as the beta gain. The higher the beta gain, the more current can be driven through the transistor.

Conclusion

The DTC143ZU3T106 is a high-speed, high-performance NPN bipolar transistor, with a wide operating temperature range and low VCE. It has a wide range of applications for current and power switching, amplification, and oscillator applications. It is a reliable solution that can handle high voltages and temperatures with outstanding performance characteristics due to its pre-biased PNPN structure.

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