Allicdata Part #: | DTC144ECAT116TR-ND |
Manufacturer Part#: |
DTC144ECAT116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 100MA 50V DIGITAL TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC144ECAT116 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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The DTC144ECAT116 is an NPN bipolar junction transistor (BJT) designed for pre-biasing applications. This device was developed to provide good linear and high frequency performance in a low noise environment. It is suitable for use in linear, power and low noise applications.
Application Field
The DTC144ECAT116 is designed for applications such as high frequency attenuators, switches, oscillators, amplifiers and frequency multipliers. It is particularly suited to applications where high power is required, but low noise and low distortion are desired.
Working Principle
A bipolar junction transistor has three terminals – the base, the collector, and the emitter. The base of the transistor is the controlling terminal – that is to say that it controls the flow of current from the collector to the emitter. The collector terminal is the high current pathway – it is the path that the majority of current takes from the power supply to the output (the emitter). The emitter terminal is the low current terminal – it is the path that the majority of current takes from the output back to the power supply.
For pre-biasing applications the base terminal is placed at a predetermined voltage (the bias voltage), the collector voltage is connected to the desired power supply voltage, and the emitter voltage is set to the voltage output desired. When the base is at the predetermined bias voltage, the current flow between the collector and the emitter will depend on the amount of current going through the base. This current flow is controlled by the current gain of the transistor, known as the hfe (commonly called the beta). The higher the hfe, or beta, the higher the current gain and the more current will flow from the collector to the emitter.
The hfe of the DTC144ECAT116 is higher than many other bipolar junction transistors, making it ideal for applications that require high current gains while keeping the noise and distortion low. Additionally, the high-frequency response is also higher than many others, meaning that it can provide good linear and high frequency performance in a low noise environment.
Conclusion
The DTC144ECAT116 is a bipolar junction transistor designed for pre-biasing applications. It has a higher hfe than many other transistors, allowing it to provide excellent linear and high-frequency performance in a low noise environment. Additionally, it is also suitable for high-power applications where low distortion and low noise are desired. It is an ideal choice for attenuators, switches, oscillators, amplifiers, and frequency multipliers.
The specific data is subject to PDF, and the above content is for reference
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