DTC144WUAT106 Allicdata Electronics
Allicdata Part #:

DTC144WUAT106TR-ND

Manufacturer Part#:

DTC144WUAT106

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 200MW UMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC144WUAT106 datasheetDTC144WUAT106 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 22 kOhms
Base Part Number: DTC144
Supplier Device Package: UMT3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DTC144WUAT106 is a family of single, pre-biased transistors for the bipolar junction transistor (BJT) family. It is a type of field-effect transistor (FET), which is one of the simplest switching devices that can be used in a variety of applications.

The DTC144WUAT106 has a high breakdown voltage, which makes it suitable for high-voltage applications. Its low on-resistance makes it suitable for applications requiring low power consumption. Its low turn-on voltage ensures easy operation and low power consumption.

The DTC144WUAT106 uses a three-terminal structure, consisting of the base, the collector, and the emitter. The base is used to control the flow of current; it is the connection between the emitter and collector. The emitter is where electrons are released or injected into the base; it is the connection with the negative side of the power source. The collector is where electrons are collected, and it is the connection with the positive side of the power source.

The DTC144WUAT106 also has a pre-biased structure, which means that it is pre-biased in order to maintain its state of operation. The base-bias voltage is applied from a resistor connected between the base and the power source. This resistor provides a preset voltage that determines the base-collector operating current. When the collector voltage is below the base-bias voltage, the FET is “off” and no current flows. When the collector voltage is above the base-bias voltage, the FET turns on, allowing current to flow.

The DTC144WUAT106 can be used in a variety of applications, including power switching, rectifiers, inverters, and high-voltage relays. It is designed for high-speed operations and is capable of switching signals with a low rise/fall time. It is also suitable for use in high-temperature and high-voltage applications, as its high on-state resistance can withstand high temperatures.

The DTC144WUAT106 is also well suited for analog applications, such as voltage regulation, current regulation, or wave shaping. In addition, it can be used in audio applications, such as amplifiers and equalizers, as well as pulse waveform shaping.

The DTC144WUAT106 is a reliable and cost-effective solution for a variety of applications. Its pre-biased structure, high breakdown voltage and low on-resistance make it ideal forlow-power consumption and high-speed operations. Its three-terminal structure and lowturn-on voltage make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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