
Allicdata Part #: | ES1ALMTG-ND |
Manufacturer Part#: |
ES1AL MTG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
7500 +: | $ 0.05001 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Introduction
ES1AL MTG, also known as absorption glass mat (AGM) technology, is a relatively new type of battery technology that has become increasingly popular over the last decade. AGM batteries are a variant of the lead-acid battery, but are superior in many ways. AGM batteries are designed to be a more efficient and reliable power solution as compared to other lead-acid batteries. This article will discuss the application field and working principle of the ES1AL MTG.Application Field
The ES1AL MTG is a lead-acid battery that is different from other lead-acid batteries. AGM technology allows the battery to have higher density and be able to deliver more power than traditional lead-acid batteries. This makes the ES1AL MTG an ideal choice for use in a wide range of applications.One of the main advantages of the ES1AL MTG is its ability to provide a stable and reliable power source with low energy loss. The low energy loss comes from the fact that AGM cells are filled with a sulfuric acid-saturated absorbent mat that acts to reduce the internal current loss and increase the overall efficiency of the battery. This makes the ES1AL MTG suitable for applications such as automotive and marine vehicles where the high performance and reliability of the battery are paramount. The ES1AL MTG has also become popular in the telecommunications industry due to its ability to provide a stable and reliable power source for electronic and communication devices.Working Principle
ES1AL MTG is a form of lead-acid battery, but uses advanced AGM technology to improve its performance. The AGM cells are filled with a saturated absorbent mat that acts as a buffer between the positive and negative leads in the battery. This helps to reduce the internal current loss and increase the overall efficiency of the battery.Unlike traditional lead-acid batteries, the ES1AL MTG is designed to be sealed so that it cannot be opened or serviced without special equipment. This helps to keep the battery cool and prevent any type of damage or corrosion from occurring. In order to operate, the ES1AL MTG requires a certain voltage charge as well as a discharging process.During the charging process, the battery is subjected to a certain voltage in order to supply the necessary power needed to operate. This charge is typically supplied from an external source and is reversed when the battery is discharged. During the discharge process, the stored energy is released in order to power whatever device or system it is being used for. This process is repeated over and over again as long as the battery remains functional.Conclusion
The ES1AL MTG is a relatively new type of battery technology that has many advantages over traditional lead-acid batteries. It is designed to be a more efficient and reliable power solution due to its use of AGM cells and its ability to provide a stable and reliable power source with low energy loss. The ES1AL MTG is suitable for a wide range of applications including automotive and marine vehicles, and telecommunications. In order to make proper use of the battery, the charging and discharging processes must be followed properly.The specific data is subject to PDF, and the above content is for reference
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ES1AL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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ES1AHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AWB | B&B Smar... | 0.0 $ | 1000 | SERIAL DEVICE SERVER 1-PO... |
ES1A-13-F | Diodes Incor... | -- | 45000 | DIODE GEN PURP 50V 1A SMA... |
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