
Allicdata Part #: | ES1ALHMTG-ND |
Manufacturer Part#: |
ES1ALHMTG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
7500 +: | $ 0.05196 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The ES1ALHMTG is a single-phase, metal case and silicon, high-temperature, general-purpose rectifier. It is designed to provide full-wave, non-polarity, alternating current to direct current (AC to DC) rectification in applications where temperatures range between -55 and 125 degrees Celsius, such as in motor vehicle, aircraft, and electronic equipment.
The most common applications for this particular diode are full-wave rectification, polarity detection, and protection of electronics from overloads or overvoltages. It is highly reliable and has an ultrafast response time and a low forward voltage drop along with its high-temperature rating, making it suitable for creating higher-outputs efficiently in often harsh environments.
Features and Benefits
- High-temperature resistant design: Rated to 125 degrees Celsius, the ES1ALHMTG offers superior thermal and operating performance for continuous use.
- High power efficiency: With a low forward voltage drop, the diode provides full-wave rectification and polarity protection, as well as allowing for a significantly improved power efficiency.
- Fast response time: The device offers a fast response time, allowing for rapid on and off applications in a fraction of the time.
- Robust design: Featuring a metal case and silicon construction, the ES1ALHMTG is highly rugged and reliable for long-term use.
Working Principle
The ES1ALHMTG rectifier is designed to convert AC to DC power by acting as a one-way gate, allowing current to pass through in one direction while blocking current in the opposite direction. This process is equally referred to as AC rectification because it results in a pulsating DC current. As the AC signal alternates between positive and negative polarity, the rectifier ensures that only positive DC voltage is passed through, while the negative polarity is blocked out.
The ES1ALHMTG rectifier is constructed from a conductive n-type semiconductor material and a p-type material. It is also equipped with a highly conductive metal casing which provides superior insulation and enables the rectifier to handle high current levels safely. When an AC signal is applied to the device, the semiconductor materials form a p-n junction barrier, preventing the current from crossing to the other side.
The current is then allowed to flow in just one direction when the AC signal reaches its peak positive or negative voltage. As this happens, the cumulative effect of the positive and negative cycles results in a single DC output. This is known as a full-wave rectification and is the basis of how the ES1ALHMTG works.
Conclusion
The ES1ALHMTG is a single-phase, metal case, silicon, high-temperature, general-purpose rectifier designed to provide full-wave, non-polarity, alternating current to direct current (AC to DC) rectification in applications where temperatures range between -55 and 125 degrees Celsius. The device is highly reliable, efficient, and has a fast response time, making it ideal for use in challenging environments where long-term performance is required. It is commonly used in full-wave rectification, polarity detection, and protection of electronics from overload or overvoltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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ES1AL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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