
Allicdata Part #: | ES1ALHR3G-ND |
Manufacturer Part#: |
ES1ALHR3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
7200 +: | $ 0.05274 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A Schottky diode usually referred to as a Schottky barrier diode, is a semiconductor device with an asymmetric, rectifying electrical conduction characteristic, which is based on the Schottky barrier phenomenon. It was developed as an alternative to the traditional PN junction diode, for use in a variety of applications. In general, Schottky barrier diodes have higher forward voltage drops, than other types of diodes, which makes them ideal for low voltage rectification and switching applications.
Schottky diodes are generally made from a metal-semiconductor junction, which is formed by depositing a metal film on a semiconductor material. This is a decrease in the electrical resistance of the junction, called the Schottky barrier height, which occurs due to the negative charges of the semiconductor material, forming a potential barrier. This potential barrier prevents the majority carriers from traveling across the junction, while allowing the majority carriers to travel through the junction.
The Schottky diode typically consists of two layers of metal, which are separated by a thin oxide layer. The oxide layer acts as an insulation strip and prevents direct current from passing through the diode. The voltage drop across the diode is largely dependent on the quality of the oxide layer, as well as the metal-to-oxide interface. When forward biased, current passes through the junction region due to the potential barrier. As the forward bias voltage increases, the current passing through the diode increases exponentially.
The Schottky diode is particularly useful in areas where low voltage is required to maintain the device’s high breakdown voltage. Furthermore, it can also be used in high speed switching applications requiring low on-state and turn-off times. It also has the advantage of low stored charge, allowing for greater efficiency in high current applications.
Schottky diodes are commonly used in RF switches, low noise amplifiers, low speed logic gates, and oscillators. They are also used in radio frequency power amplifiers for matching circuits, as well as in voltage controlled oscillators. Furthermore, they are often used in boost converters and buck converters, which are power supply circuit configurations used to regulate the output voltage of various electronic devices. Additionally, Schottky barrier diodes are also used in transistors for buffer amplifiers, and for controlling the base-emitter voltages in transistors.
The Schottky diode is an ideal choice for applications that require low voltage operation, high frequency switching, and low noise. It is often chosen over other rectifier components due to its low power loss and higher efficiency. Furthermore, its low voltage drop over temperature makes it an ideal choice for circuit designs which often experience high temperature variation. As such, the Schottky diode is a popular choice for numerous applications in modern electronic devices.
In summary, the Schottky diode is a rectifying diode which utilizes the Schottky barrier effect to allow electrons to travel across the junction. It has a lower forward voltage drop than other types of diodes, and can be used in a variety of applications where low voltage operation, high frequency switching, and low noise are required. Therefore, the Schottky diode is a popular choice for various modern electronic devices.
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Part Number | Manufacturer | Price | Quantity | Description |
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ES1A-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AWB | B&B Smar... | 0.0 $ | 1000 | SERIAL DEVICE SERVER 1-PO... |
ES1A-13-F | Diodes Incor... | -- | 45000 | DIODE GEN PURP 50V 1A SMA... |
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