| Allicdata Part #: | ES1AE-TPMSTR-ND |
| Manufacturer Part#: |
ES1AE-TP |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE GEN PURP 50V 1A DO214AC |
| More Detail: | Diode Standard 50V 1A Surface Mount DO-214AC (SMAE... |
| DataSheet: | ES1AE-TP Datasheet/PDF |
| Quantity: | 6000 |
| 6000 +: | $ 0.04763 |
| 12000 +: | $ 0.04234 |
| 30000 +: | $ 0.03969 |
| 60000 +: | $ 0.03528 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 975mV @ 1A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 5µA @ 50V |
| Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMAE) |
| Operating Temperature - Junction: | -50°C ~ 150°C |
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A Serene-Thyristor Application Field and Working Principle
The serene thyristor (ES1AE-TP) is a diode rectifier-single that is used to convert AC to DC. It is also commonly referred to as a Reverse Conductivity-Thyristor (RCT). This device is used where a rectifier is needed to convert a high voltage alternating current to a direct current. It is also used for the control of high-power devices in industrial and commercial applications.
The serene-thyristor is composed of two anti-parallel thyristors, cross connected in a bridge configuration. It is an effective device for the control of high voltage alternating current. This device is used in both single and three-phase applications. The devices in the serene-thyristor are designed to be current-control devices, allowing the user to adjust the amount of current that is drawn.
The principle behind the operation of the serene-thyristor is based on the reverse conduction properties of the thyristor. In a single phase system, the maximum voltage is limited to the point of reverse conduction. In a three-phase system, the reverse conduction occurs at different voltages throughout the cycle. When the thyristor is placed in this configuration, it detects when the cycle is at the point of reverse conduction and interrupts the flow of current. This control is of great importance in the control of high-power devices.
The serene-thyristor is used for the control of high voltages, currents and transient applications. It is designed specifically for single-phase and three-phase AC to DC conversion applications. In addition to its rectifying ability, this device can also be used for the control of high-power devices. It is designed in such a way that it can also be programmed to detect and respond to a variety of controlling signals and commands. This advanced electronics control feature makes the serene-thyristor an effective control for high-power devices.
The working principle of the serene-thyristor is based on the organization of the elements that make up the bridge. The bridge is composed of two anti-parallel thyristors, and they are connected in such a way that they form a loop. This loop is then connected to a direct current power source. The power is applied to the loop and the current flows in a direction determined by the configuration of the thyristors. In a single phase system, the current will flow either clockwise or counterclockwise. In a three phase system, the current flows whichever way the device is programmed to flow. When the thyristors are in a reverse conductivity state, the flow is stopped.
The ability of the serene-thyristor to control the flow of current is the most important factor in the successful control of the high voltage alternating current. When the serene-thyristor detects the point of reverse conduction, it will interrupt the current flow and the alternating current is then converted to a direct current. This device is also used for several different applications including over-voltage protection and load switching.
The serene-thyristor is an effective rectifier-single that is used to provide AC to DC conversion. It is also used for the control of high-power devices in industrial and commercial applications. This device is composed of two anti-parallel thyristors that are configured in a bridge. The working principle of the serene-thyristor is based on the reverse conduction properties of the thyristors. The bridge will detect the point of reverse conduction and is then able to interrupt the current flow. The device is also programmed to detect and respond to a variety of controlling signals and commands. This makes the serene-thyristor an effective control for high-power devices.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
| ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
| ES1AL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AWB | B&B Smar... | 0.0 $ | 1000 | SERIAL DEVICE SERVER 1-PO... |
| ES1A-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1A M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
| ES1A-13-F | Diodes Incor... | -- | 45000 | DIODE GEN PURP 50V 1A SMA... |
| ES1ALHRVG | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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ES1AE-TP Datasheet/PDF