
Allicdata Part #: | ES1ALHRFG-ND |
Manufacturer Part#: |
ES1ALHRFG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
9000 +: | $ 0.05196 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES1ALHRFG is a type of diode rectifier and can be classified as a part of Single (1N4148, etc.). It offers a low forward voltage drop, allowing for low power consumption, high frequency operation and superior electrical characteristics. It also provides an extremely low reverse leakage current to further increase efficiency and reduce power loss.The main application area of ES1ALHRFG is on-board DC/DC converters. It is suitable for automotive electronics, including industrial and consumer electronics, i.e. white goods, power supplies, solar converters, entertainment and networking equipment. Moreover, thanks to its reverse blocking and low reverse leakage current characteristics, it is ideally suited for power supplies and back-up systems.
The main features of ES1ALHRFG can be listed as follows:
- Low forward voltage drop makes low power consumption possible.
- High frequency operation for superior electrical characteristics.
- Extremely low reverse leakage current for even more efficiency and power savings.
- Reverse blocking for power supplies and back-up systems.
The working principle of ES1ALHRFG is simple: the diode consists of two prongs, the anode and cathode. When the anode is exposed to a positive voltage, current will flow, while when the cathode is exposed to a positive voltage, current will not flow. This is due to the fact that the anode has a lower electrical potential than the cathode, and it is this potential difference that allows the current to flow. This process is known as rectification and is the basis for the operation of all diode rectifiers.
Due to its low forward voltage drop, a single ES1ALHRFG diode rectifier is commonly used in on-board DC/DC converters. In this application, the diode works together with other components to rectify and control the current flow, thereby reducing power consumption, controlling the output frequency and improving efficiency.Similarly, since the device also offers an extremely low reverse leakage current and reverse blocking, it is used in battery-powered power supplies and backup systems, where lack of power failure is critical.
In conclusion, ES1ALHRFG is a type of diode rectifier which can be classified as a part of Single. It offers a low forward voltage drop, allowing for low power consumption, high frequency operation and superior electrical characteristics. Moreover, it also features an extremely low reverse leakage current and reverse blocking, making it ideal for on-board DC/DC converters, power supplies and back-up systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
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ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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