| Allicdata Part #: | ES1A-TPTR-ND |
| Manufacturer Part#: |
ES1A-TP |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE GEN PURP 50V 1A DO214AC |
| More Detail: | Diode Standard 50V 1A Surface Mount DO-214AC (HSMA... |
| DataSheet: | ES1A-TP Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.05358 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Last Time Buy |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 975mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 50V |
| Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (HSMA) |
| Operating Temperature - Junction: | -50°C ~ 150°C |
| Base Part Number: | ES1A |
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The ES1A-TP is a device belonging to the category of diodes and rectifiers that is composed of a single unit. The device has been designed with a range of functions and applications. This article will focus on the application fields and working principles of the ES1A-TP diode.
The ES1A-TP diode offers a wide range of useful applications. It can be used as a voltage selector in order to regulate the applied voltage and maintain a stable current in circuits. Additionally, the device is incredibly useful for switching circuits in order to reduce voltage spikes and protect sensitive devices. The switching speed of the device is incredibly fast and provides protection from high voltage devices. Additionally, it is useful for controlling the on/off functions of relays as well as other digital and analog applications.
The device also features a low forward voltage drop when compared to traditional switching. This low voltage drop increases the efficiency of the device and helps maintain a low power consumption when used in various applications. The small footprint and light weight of the device make it perfect for applications involving small spaces or those where space and weight are a concern.
The working principle of the ES1A-TP diode can be explained as follows. When current is passed through the device, it creates a barrier of positive ions and negative electrons that prevent any further current from passing through. This creates a switching action which controls the flow of power throughout a circuit. The device also produces a certain level of energy losses due to the resistance caused by this switching action.
When the voltage across the device is increased, the device will switch the circuit on; when the voltage is reduced, the device will switch the circuit off. This switching action is incredibly useful for protecting sensitive components from unexpected voltage changes. Additionally, by providing voltage regulating services, the device can protect circuits from power surges and prevent short-circuits.
Finally, the ES1A-TP diode can be used in a variety of logical applications. It can be used in order to control the on/off times of digital circuits. The device can also be used to create a time delay which can be very useful in time-sensitive applications. By controlling the time delay, the device can be used in conjunction with other complex circuits which can help in controlling and coordinating system operations.
In summary, the ES1A-TP diode offers a wide range of applications and features that make it incredibly useful for a variety of applications. It features a low forward voltage drop which helps reduce power consumption and provides switching functions that are incredibly fast. It also provides voltage regulating services, time delay controls, and protection from unexpected voltage changes. All of these features make the ES1A-TP diode an invaluable tool in numerous applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
| ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
| ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AWB | B&B Smar... | 0.0 $ | 1000 | SERIAL DEVICE SERVER 1-PO... |
| ES1A-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
| ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1A-13-F | Diodes Incor... | -- | 45000 | DIODE GEN PURP 50V 1A SMA... |
| ES1ALHRVG | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
| ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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ES1A-TP Datasheet/PDF