
Allicdata Part #: | ES1ALRHG-ND |
Manufacturer Part#: |
ES1AL RHG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.04445 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are semiconductor devices mostly used as rectifiers, which can convert alternating current (AC) to direct current (DC). In general, a diode consists of an anode, a cathode and PN junction. It works by allowing current to flow in one direction, by creating a potential barrier for the currents flowing in the opposite direction. The single diode rectifier (ES1AL RHG) is a device that consists of a single diode which converts AC to DC. This type of rectifier is commonly used in AC-DC power supplies.
The main purpose of the ES1AL RHG rectifier is to filter out the AC component of the input voltage and pass the DC component of the input voltage to the output. It works by utilizing the principle of rectification, which is the process of converting an AC into a pulsating DC voltage. This is done by allowing current to flow through the diode when the input voltage is positive and preventing current from flowing when the diode is reversed biased.
The ES1AL RHG rectifier is different from other single diode rectifiers in that it features two extra features to increase its functionality. Firstly, it has a high-speed response, which minimizes the effect of input voltage ripple and ensures a smooth transition from AC to DC. Secondly, it has a very wide operating temperature range, allowing it to be used in applications where temperatures can range from a low of -55 degrees Celsius to a high of +150 degrees Celsius.
The ES1AL RHG rectifier is used in many different applications, including AC-DC power converters, DC-DC power converters, power supplies, electronic lighting systems, energy storage devices and many more. Additionally, it is also used in motor control systems in order to reduce the effects of motor torque ripple.
The working principle of the ES1AL RHG rectifier is based on the depletion layer formed at the junction of the PN junction within the diode. When a forward bias is applied to the diode, an electric field is created between the N and P semiconductor materials in the diode which creates a depletion layer. This ensures that all carriers within the depletion region - electrons, holes and ions - are separated from each other. This prevents charge carriers from crossing the junction in the reverse direction.
When AC current is applied to the diode, a positive potential on the anode allows electrons to flow through the PN junction in the forward direction. However, due to the depletion layer no electrons can be allowed to cross the junction in the reverse direction. This process continues until the wave of the current reverses and the diode is then switched off. The resulting waveform is a smoothed DC waveform.
The ES1AL RHG rectifier is a reliable device that offers a number of advantages. It offers improved conversion efficiency, low distortion, and it has a wide operating temperature range. Additionally, due to its small and lightweight design, it is suitable for applications in a variety of industries. The device can also be used for both single and three-phase applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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ES1AL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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ES1A R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
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ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
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