
Allicdata Part #: | ES1ALRTG-ND |
Manufacturer Part#: |
ES1AL RTG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
7500 +: | $ 0.05001 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Electrostatic-activated rtg (ESAR-RTG) is a type of device which uses electrostatic attraction to move particles and surfaces. This device has become increasingly important in the field of particle and surface engineering. It has the advantage of being able to offer rapid and efficient mixing, mixing, sorting and separation of materials. This article will discuss the application field and working principle of ESAR-RTG.
Application Field of ESAR-RTG
The application field of ESAR-RTG consists mainly of particle and surface engineering. It is commonly used in the field of sorting, mixing, and separation of particles, as well as in the processing of surfaces. It is also used in optical sorting applications such as LCD and plasma displays. It is mainly used for particle and surface processing. In particle engineering, ESAR-RTG is used for the homogenization of properties in powders, which is a process of altering the properties of powders. It is also used for the sorting, mixing, and separation of particles. This enables the creation of a range of different particle properties. For example, particles can be sorted according to size and material composition. In surface engineering, ESAR-RTG is used for the processing and transformation of surfaces. This process allows for the creation of modified surfaces with specific properties and characteristics. It is also used in applications where uniform or controlled surface topography is desired.
Working Principle of ESAR-RTG
The working principle of ESAR-RTG relies on the choice of material used. A wide variety of materials can be used, such as glass, metal, plastic, or ceramic. Each material has its own specific properties which determine how it interacts with the particles during processing. When a particle is exposed to a high voltage, it will be attracted to the highest point on the surface, known as a "nucleation point". At this point, the particle will physically bind itself to the surface. This is known as the "electrostatic attraction" of the particle and is the key factor in the working principle of ESAR-RTG.The electrostatic force, combined with the mechanical movement of the material, will cause the particles to move. As the particles move, they create a flow which can be directed and manipulated to achieve the desired results. This process can be controlled using a variety of tools such as microfabrication, electrostatic voltages, and particle shape. Using ESAR-RTG, particles can be separated, mixed, or sorted efficiently. It can also be used to modify surfaces in order to create different properties and characteristics. The process is relatively quick and easy to implement and is widely used in the field of particle and surface engineering.
Conclusion
ESAR-RTG is a versatile device which can be used for a variety of particle and surface engineering applications. It has the advantage of being able to offer rapid and efficient mixing, sorting, and separation of particles. It is also used to modify surfaces in order to create specific properties and characteristics. The process relies on the use of high voltages and mechanical forces to achieve the desired results. It is a fast, efficient, and easy to use process which has become increasingly important in the field of particle and surface engineering.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1A-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AWB | B&B Smar... | 0.0 $ | 1000 | SERIAL DEVICE SERVER 1-PO... |
ES1A-13-F | Diodes Incor... | -- | 45000 | DIODE GEN PURP 50V 1A SMA... |
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