
Allicdata Part #: | ES1ALHM2G-ND |
Manufacturer Part#: |
ES1ALHM2G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
7500 +: | $ 0.05196 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single, or DRS, are special-purpose semiconductor devices used for converting alternating current (AC) to direct current (DC). An ES1ALHM2G, a DRS device, is a type of diode used for power rectification, commonly found in power supplies. With its wide range of applications, the ES1ALHM2G has become an indispensable component in the power conversion system.
Application field of the ES1ALHM2G
The ES1ALHM2G is a 25 Amp ultra-fast, ultra-soft-recovery diode that can withstand temperatures up to 200°C. Its high heat dissipation, wide range of forward current ratings, high recovery speeds and low voltage drop are some of the features that make the ES1ALHM2G suitable for rectifying high-voltage line power. The ES1ALHM2G is most commonly used in switching power supplies, DC-DC converters, and high-frequency inverters.
In high-frequenc y switching power supplies, the ES1ALHM2G’s support of high recovery speeds and high current ratings, coupled with its low voltage temperature coefficients and low noise characteristics enable it to play the role of the switch. Thus, it provides a highly efficient and efficient conversion of AC mains to DC for regulation and power factor correction.
In applications where there is a requirement for alternating current to be converted to direct current, the ES1ALHM2G also excels. Its low noise and high forward current rating provide more efficient conversion of AC mains to DC with minimal interference. This makes it ideal for use in medical and military applications, where low noise and reliable, efficient conversion are essential features.
In high-frequency inverters, the ES1ALHM2G is an essential current shunt. Its high current ratings and fast recovery times help minimize electromagnetic interference in the circuit and reduce noise. This enhances the safety of high-frequency inverters and ensures reliable operation in even the most hostile environments.
Working Principle of the ES1ALHM2G
The ES1ALHM2G is a diode that works by allowing the current to flow in one direction. The diode has two anodes and one cathode. When a dc current is passed through the diode, the anode becomes positive and the cathode negative. The diode only allows current to flow from the positive side to the negative side, preventing it from flowing in the reverse direction.
When a forward bias voltage is applied across the diode, the current starts to flow in the forward direction. This allows the diode to rectify AC current and convert it into DC current. The forward current is limited by the diode’s junction capacitance. This capacitance can be reduced by adding more junction diodes in parallel.
During the reverse-bias condition, the diode blocks the flow of current. It acts as a short-circuit when the reverse-bias voltage is greater than the breakdown voltage. This is why the ES1ALHM2G is considered an ultra-fast, ultra-soft-recovery diode; it can quickly and effectively switch between the forward and reverse bias conditions.
The main advantage of the ES1ALHM2G is its high durability, allowing it to withstand temperatures up to 200°C. This makes it suitable for a wide range of applications and gives users peace of mind in high-power operations.
The ES1ALHM2G is an essential part of high-frequency inverters, switching power supplies, and medical equipment. Its fast recovery speeds, low voltage drop, and high heat dissipation capability make it invaluable in ensuring reliable and efficient power conversion.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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ES1A-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AWB | B&B Smar... | 0.0 $ | 1000 | SERIAL DEVICE SERVER 1-PO... |
ES1A-13-F | Diodes Incor... | -- | 45000 | DIODE GEN PURP 50V 1A SMA... |
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