FCP20N60_G

Introduction

FCP20N60_G is a FET (Field Effect Transistor) manufactured by ON Semiconductor, originally designed for high-performance power management in mobile power systems. FCP20N60_Gs are designed to minimize losses and enable improved system efficiency.

Application

The FCP20N60_G is a well-suited choice for switch mode applications, such as DC-to-DC power converters, DC motor controllers, uninterruptible power supply, switching power supplies and laptop adapters. This transistor can also be used for voltage and current monitoring, overcurrent protection, and gate drive isolation in applications such as oil rigs, solar inverters, lighting, and home appliances.

Working Principle

The FCP20N60_G (630V, 20A, N-Channel MOSFET) is an insulated gate type device that relies on an electric field to control transistor action. It uses a conductive channel located between the two terminals, allowing current to flow between them when a voltage is applied to the Gate terminal. As the gate voltage is increased, the electrical field increases and electron movement increases, resulting in a greater flow of current. When the gate voltage is decreased, the electrical field weakens, causing electrons to move slower, and resulting in a decrease in current flow.

The FCP20N60_G has a maximum drain-source voltage rating of 630V and a drain current of 20A. It is designed to minimize conduction losses and to enable improved system efficiency. The FCP20N60_G has a fast switching time and an excellent ESD (electrostatic discharge) performance.

Structure and Design

The FCP20N60_G is a monolithic N-Channel MOSFET. The chip is made of a wafer of gallium arsenide substrate. The resulting transistor has a three-terminal design. The Gate terminal is used to control the current flow between the Drain and Source terminals. Due to its insulated gate, the FCP20N60_G is able to operate at a much higher voltage than a standard BJT (Bipolar Junction Transistor) without compromising its efficiency.

The device is equipped with an optimized package design that allows for a higher current density and a smaller footprint compared to other MOSFETs of its size.

Conclusion

The FCP20N60_G is an effective power management solution for numerous applications. It features a high voltage rating of 630V, a drain current of 20A, and a fast switching time, making it capable of handling a wide range of tasks with efficiency. In addition, its optimized package with a smaller footprint provides greater current density.