FCP20N60

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The FCP20N60 is a N-channel MOSFET semiconductor component with a four-pin package that is mainly used in switching as well as amplifying applications. It is manufactured by Fairchild Semiconductor and combines benefits of low capacitance and low on-state resistance together with ease of construction and superior performance in various circuits.

The FCP20N60 is composed of a metal-oxide-semiconductor (MOS) with N channel of 20 amps and 60 volts. This component is primarily used in switching, power management, and motor control. It is also suitable for applications under high speed or temperatures up to 150 oC.

Application Fields

The FCP20N60 has multiple application fields, including:

• Electrical Appliances: The device can be used in washing machine, air conditioners, refrigerators, etc.
• Automotive: The FCP20N60 can be utilized in a variety of automotive components from GPS systems, displays, and other engine control components.
• Industrial Machinery: FCP20N60 is used for on/off switching of relays and controllers.
• Medical Equipment: The MOSFET is capable of providing reliable switching and amplifying performances in electrosurgical procedures, electrotherapy equipment, heart-lung machine.

Working Principle

The FCP20N60 contains a metal-oxide-semiconductor field-effect transistor (MOSFET). It consists of four terminals: gate, drain, source, and body. By controlling the voltage applied to the gate terminal, the current flow between the source and the drain terminals can be controlled. The source terminal is connected to the source of the current, the drain terminal is where the current is being extracted, and the gate terminal is where the control voltage is applied. The body terminal is usually connected to the source terminal. When a positive voltage is applied to the gate terminal, electrons in the channel region begin to accumulate. This increases the conductance of the MOSFET, allowing current to flow from the source to the drain. If a negative voltage is applied, the electrons are depleted and the conductance of the MOSFET decreases, reducing the current flow.

The FCP20N60 is designed to be able to handle high current and high temperature conditions. It has a drain-to-source breakdown voltage (BVDSS) of 60 V, a drain current (ID) of 20A and a maximum drain-source on-state resistance (RDS(on)) of 0.17 ohms. This makes it a perfect choice for applications that require both high current and low on-state resistance.

Conclusion

The FCP20N60 is a semiconductor component with a N-channel MOSFET architecture. It has multiple application fields such as automobile, electrical appliances, industrial machinery, and medical equipment. With its high current and low on-state resistance, it is a perfect choice for applications requiring reliability and superior performance.

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