Allicdata Part #: | FCP20N60FS-ND |
Manufacturer Part#: |
FCP20N60FS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V TO220-3 |
More Detail: | N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-... |
DataSheet: | FCP20N60FS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3080pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Series: | SuperFET™ |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FCP20N60FS is a powerful and versatile field-effect transistor (FET) that can be applied to a variety of applications. It is designed to offer superior performance in both low- and high-power applications, as well as superior switching speeds suitable for high-frequency applications. The FCP20N60FS features a high-voltage MOSFET that can be used in circuits that require low on-state resistance and fast switching times. This device can handle a wide range of input and output voltages, and is well-suited for both logic-level and high-speed signal applications.The FCP20N60FS is well-suited for use as a signal switching device in many applications. It is ideal for signal switching circuits that require low on-state resistance and fast switching times. It is also useful in power switching applications, allowing the user to switch between two separate loads. The FCP20N60FS can also be used as a buffer in power-supply circuits.The FCP20N60FS is a high-performance FET with a high-voltage MOSFET structure. This device has a high blocking voltage of up to 800 V. The FET also has an excellent on-state resistance of only 2 mΩ. It has a very low on-state capacitance of 12 pF, making it ideal for high-frequency applications. In addition to providing high blocking voltage and low on-state resistance, the FCP20N60FS also has very low switching turn-on and turn-off times of 25 ns and 35 ns, respectively.The operation of the FCP20N60FS is as follows: An input signal is applied to the gate, which turns on the MOSFET, allowing current to flow across the source and drain terminals. The current flow is controlled by the gate voltage, which is typically turned on by a logic signal or control signal. When the source and gate voltages are equal, the device is said to be fully turned on. The threshold voltage of the FCP20N60FS is typically around 5 V, meaning that the gate voltage must be greater than 5 V in order for the device to be fully on.The FCP20N60FS is an ideal device for many applications where its performance characteristics make it an attractive option. Its wide operating range, low on-state resistance, and fast switching times make it well-suited for high-frequency and power-switching applications. In addition, its high blocking voltage makes it suitable for use in many different circuits. This makes the FCP20N60FS an essential device for those looking to build circuits with superior performance.
The specific data is subject to PDF, and the above content is for reference
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