Allicdata Part #: | FCP290N80-ND |
Manufacturer Part#: |
FCP290N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 17A TO220 |
More Detail: | N-Channel 800V 17A (Tc) 212W (Tc) Through Hole TO-... |
DataSheet: | FCP290N80 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 1.7mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 212W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3205pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCP290N80 is a Field-Effect Transistor (FET) designed to provide low on-resistance and a low foating body effect. It is a N-type Ultra-Low Gate Charge (UGL-GC) Enhancement Mode FET, with an extremely low RDS(ON) resistance and an exceptionally strong dielectric breakdown voltage. This FET is ideal for applications that require very low drain-source resistance and high current control for high frequency switching applications.
The FCP290N80 comprises of a constant current source composed of a RDS(on) resistor, a low voltage detector, a low leakage pull-up resistor and a Zener protection element. This constant current source is connected in parallel with the source-drain of each branch. When both gate and source of the FET are pressed together, the FET will be on and it will turn off when the gate voltage goes above the breakdown voltage.
The FCP290N80 never requires a gate voltage of more than 6V and will not turn off even with a higher gate voltage. Instead, the powerful dielectric breakdown charge control mechanism prevents it from turning off. This mechanism provides active current control at high frequencies and makes the FET ideal for high frequency switching applications.
Additionally, the FCP290N80 has a low input capacitance, making it suitable for applications with high input frequency and voltage. It also has a very low gate-drain resistance, providing excellent current control and fast switching. Moreover, the FET has a high switching speed, which provides a smooth and ripple-free transition from high to low voltage. Finally, the FET is built using a copper-clad insulated metal substrate, making it suitable for use in high temperature applications.
The FCP290N80 is ideal for automation control, power supplies, digital control systems and other applications requiring low drain-source resistance and high current control for high frequency switching. Additionally, it is suitable for applications that require an extremely low RDS(on) and a powerful dielectric breakdown voltage. The FCP290N80 is the perfect solution for customers looking for an easy to use and reliable FET device.
The specific data is subject to PDF, and the above content is for reference
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