FCP220N80

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The FCP220N80 MOSFET is a high voltage N-channel MOSFET with superior avalanche energy capability and low R_DS(on). It has a maximum drain-source voltage of 800V, a drain current of 220A and is available in IRF Standard packages. This makes it an ideal choice for a wide range of applications including motor control, robotics, power acceleration, and dreammetric.

FCP220N80 Application Field

The FCP220N80 is mainly used in applications where high voltage switching, high current operation and low R_DS(on) are essential. Its superior avalanche energy capability and low on resistance make it suitable for applications such as motor control, robotics, power acceleration, and dreammetric. It is also used in high-voltage switching regulators, DC-DC converters and high-voltage power supplies. It is also used in applications where high-current switching is required such as DC motor control and High-Voltage DC drives.

FCP220N80 Working Principle

The FCP220N80 works by utilizing vertical conduction between the source and drain contact. A high electric field is created in the vertical direction between the source and drain contact and vertical conduction between the source and drain contact occurs. The high electric field is created by an applied gate voltage and the gates voltage determines the specific level of the electric field. The gate voltage not only creates the electric field but also controls the density of mobile charges, which determines the conductivity of the FCP220N80. The higher the gate voltage, the stronger electric field and consequently, the higher the conductivity. The FCP220N80 is a voltage controlled device and its performance is dependent on the voltage applied at the gate.

The FCP220N80 is a high performance MOSFET and has numerous advantages over other MOSFET devices. It is capable of operating at very high voltages and has a very low gate charge. This makes it highly efficient and cost effective in applications requiring high voltages. Furthermore, with its superior avalanche energy capability and low R_DS(on) values, it can be used in high current applications requiring higher efficiency and power conversion. Additionally, the FCP220N80 has a relatively large capacity for charge and consequently, its switching frequency can be kept relatively low when operating under demanding conditions.

Conclusion

The FCP220N80 MOSFET is a high voltage N-channel MOSFET with superior avalanche energy capability and low R_DS(on). It is mainly used in applications where high voltage switching, high current operation and low R_DS(on) are essential. Its superior avalanche energy capability and low on resistance makes it suitable for applications such as motor control, robotics, power acceleration, and dreammetric. The FCP220N80 is a high performance MOSFET and is capable of operating at very high voltages with a very low gate charge leading to high efficiency and cost effectiveness.

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