Allicdata Part #: | FCP260N60E-ND |
Manufacturer Part#: |
FCP260N60E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N CH 600V 15A TO-220 |
More Detail: | N-Channel 600V 15A (Tc) 156W (Tc) Through Hole TO-... |
DataSheet: | FCP260N60E Datasheet/PDF |
Quantity: | 738 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FCP260N60E application field and working principle
The FCP260N60E is a High Voltage, High Speed Power MOSFET using advanced Feature of the MOSFET process. In comparison with the traditional FETs and BJT, it has many advantages such as high switching speed, low on-state resistance, low power loss, low interference and so on.
Applications
FCP260N60E is widely used in power management, converters or inverters, motor control, frequency divider, power factor correction, and so on. With its high switching speed, the FCP260N60E can be used in high-frequency high-voltage applications for lightning, filter circuits, and so on.
Working Principle
The MOSFET is a type of insulated gate field-effect transistor (IGFET), which has an insulated gate and a source. When a signal is applied to the circuit, a voltage is applied to the insulated gate. This voltage induces an electric “field” between the source and the drain. When the voltage applied to the gate is high enough, the influx of carriers from the source to the drain is allowed. This is what allows current to flow between the source and the drain.
MOSFETs are known for their use in power transistors because of the high-frequency, high-voltage levels they can switch. They’re also known for their low-power dissipation, which makes them ideal for the modern green electronics.
Advantages
One of the primary advantages of using the FCP260N60E is its high voltage, high-speed performance. It has an ultra-low on-state resistance, making it ideal for high frequency applications. This also results in low power losses as the FET operates at a very low voltage. Additionally, its switching speed is much faster than conventional BJTs and FETs, allowing for better signal integrity and less distortion in higher frequency applications.
FCP260N60E MOSFETs are also known for their low interference, making them ideal for signal processing, audio and RF applications. These transistors are also capable of serving as high impedance loads, helping to reduce the power consumption of a system. Additionally, they\'re robust and reliable even in harsh environments.
Disadvantages
The main disadvantage of using the FCP260N60E MOSFET is its cost. It is a highly specialized part, and its price can make it cost prohibitive for some applications. Additionally, its packaging can be bulky, making it difficult to use in tight spaces.
Conclusion
The FCP260N60E MOSFET is a high voltage, high speed device which is ideal for power management and applications requiring lightning, filter circuits and signal processing. It has many advantages, such as low power losses, low interference and high switching speed. However, its cost and bulky packaging can be a factor to consider when deciding which device to use for a particular application.
The specific data is subject to PDF, and the above content is for reference
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