FCP22N60N Allicdata Electronics
Allicdata Part #:

FCP22N60N-ND

Manufacturer Part#:

FCP22N60N

Price: $ 4.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 22A TO-220
More Detail: N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-...
DataSheet: FCP22N60N datasheetFCP22N60N Datasheet/PDF
Quantity: 1035
1 +: $ 4.17690
10 +: $ 4.05159
100 +: $ 3.96806
1000 +: $ 3.88452
10000 +: $ 3.75921
Stock 1035Can Ship Immediately
$ 4.18
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 205W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V
Vgs (Max): ±45V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: SupreMOS™
Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCP22N60N is a high-performance single N-channel MOSFET that is commonly used to provide excellent power and energy efficiency in today\'s power electronics. This device is designed for use in switching and amplifier applications and features a low on-resistance and fast switching times that make it one of the most popular MOSFETs for power applications. In this article, we will discuss the application field and working principle of the FCP22N60N device.

The FCP22N60N is a popular MOSFET for power applications due to its low on-resistance and fast switching times. Its low on-resistance ensures that it can handle high current applications while its fast switching times make it suitable for switching and amplifying applications. It can be used as a switch or amplifier in a wide range of power electronics applications, including: voltage converter circuits, high-speed switching circuits, automotive power systems, power supplies, and pulsed power circuits. This MOSFET is also particularly well suited for use in high-efficiency motor control applications, where it can provide excellent power efficiency and energy efficiency.

The FCP22N60N is a single N-channel MOSFET, meaning that it has an N-type substrate, a source terminal, and a drain terminal. As with other MOSFET devices, the FCP22N60N is controlled by a gate voltage, which determines the on and off states of the device. When the gate voltage is applied, electrons in the N-type substrate are attracted to the gate, which results in a depletion region near the source and drain terminals. This depletion region creates a barrier to the flow of current, and when the gate voltage is removed, the electrons move away from the gate, allowing current to flow through the device. This makes it possible to control the flow of current in a system using the FCP22N60N MOSFET.

The FCP22N60N is able to provide excellent power and energy efficiency, due to the device\'s low on-resistance and fast switching times. Its low on-resistance ensures that it can handle high current applications without significant power losses, while its fast switching times make it relatively efficient when operating at high frequencies. This makes the FCP22N60N an ideal device for applications that require high efficiency or high speed operation.

In conclusion, the FCP22N60N is a high-performance single N-channel MOSFET that is particularly well suited for use in power electronics applications. Its low on-resistance and fast switching times make it an excellent choice for use in applications where power and energy efficiency are required. The FCP22N60N is an excellent choice for high-speed switching and amplifying applications, as well as applications that require high efficiency or high speed operation.

The specific data is subject to PDF, and the above content is for reference

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