FDD9407L-F085

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The FDD9407L-F085 is a single N-channel Enhanced FET made with advanced planar and vertical double diffused MOS (DMOS) technology. These devices are specifically designed to provide improved dynamic performance and low on-resistance per area.

This particular FET offers an extremely broad range of applications, from those needing low-side switches to high-side switching (12v-48V) of loads over 5A. It is perfectly suited for the automotive, appliance and industrial products across the board.

It also has numerous advantages in motor control and speed control, as well as in other industrial applications. Being reliable, fast, and accurate in its performance, this FET is also particularly well-suited for applications that require precise switching, such as signal processing.

The FDD9407L-F085 is a single N-channel DMOS FET which can be used in various switching applications and can be used with the correct biasing at supply voltages of up to 48V. It has a low on-state resistance (RDS(on)＜210 mΩ) and a high-current rating (I D > 5A).

The FET is composed of a semiconductor of three layers (doped silicon in n-type and n + type) and a gate that is isolated from the semiconductor by a thin oxide layer. The gate voltage controls the current through the channel between the source and drain. When the gate voltage is applied, the current is directed and limited by the thickness of the oxide layer.

The FDD9407L-F085 is widely used in automotive applications and remote sensing because of its low on-state resistance. It is employed in linear regulator circuits, and in DC-DC conversion applications, because of its low losses. It is also widely used in switching circuits, especially power switches and SRAM write drivers.

The FDD9407L-F085 is rated for operation at junction temperatures between - 40°C and +150°C and can be used in all kinds of applications, from automotive, consumer and industrial applications. It is perfectly suited for using in both commercial and automotive circuit designs. It has a high on/off ratio and is capable of switching loads of up to 5 A.

For protection against negative transients, the FET has a built-in avalanche protection circuit. This allows a maximum avalanche voltage of 7V. The gate charge, QG, is specified to ensure a safe turn-on, and the FET has an optimized body diode for fast switching.

This particular FET offers a very low Ron value that can be achieved by a reasonable gate bias and suitable packages that can withstand a maximum of 250 V breakdown ratings. This helps reduce the power dissipation and increase efficiency in applications.

In summary, the FDD9407L-F085 is a High Voltage Single N-channel Enhanced FET designed specifically to provide improved dynamic performance and low on resistance in a very broad range of applications. It is especially suitable for remote sensing, motor control and speed control, linear regulator circuits, DC-DC conversion applications, power switches, and SRAM write drivers.

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