Allicdata Part #: | FDD9507L-F085OSTR-ND |
Manufacturer Part#: |
FDD9507L-F085 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | PMOS DPAK 40V 4.4 MOHM |
More Detail: | P-Channel 40V 100A (Tc) 227W (Ta) Surface Mount D-... |
DataSheet: | FDD9507L-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.53266 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 227W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6250pF @ 20V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDD9507L-F085 is a field-effect transistor (FET) designed for use in high frequency applications, including power gain stages and amplifier circuits. It features an industry-standard footprint and is based on the FinFET silicon-on-insulator (SOI) process. As a single MOSFET, it operates on a single voltage, rather than two or three, and is suitable for a wide range of applications.
The FDD9507L-F085 is a metal-oxide-semiconductor field-effect transistor (MOSFET) and is the most commonly used type of FET. It is a type of transistor that relies on an electric field to control the transfer of electrons between two terminals: the source and the drain. It is this electric field that is responsible for the operation of the FDD9507L-F085, as it acts to control the flow of electrons in either direction through it.
As a single MOSFET, the FDD9507L-F085 has a single source and single drain. This means it is capable of operating on a single voltage, rather than the two or three associated with multiple FETs. This feature makes it ideal for a wide range of applications, such as power gain stages, amplifier circuits and high frequency applications. Its single-voltage operation also means it consumes less power than multiple FETs, making it more efficient and cost-effective.
The FDD9507L-F085 is based on the FinFET silicon-on-insulator (SOI) process. It is an advanced manufacturing technique that uses silicon as a substrate and is designed to reduce the leakage current in low-voltage devices. This is an important feature for high frequency applications, as it reduces losses due to capacitive coupling and inductive loading. This makes the FDD9507L-F085 more reliable and efficient in these types of applications.
The FDD9507L-F085 is designed for use in a wide range of applications, including power gain stages and amplifier circuits. It is also suitable for high frequency applications and is based on the FinFET silicon-on-insulator (SOI) process. It offers single-voltage operation, which makes it both efficient and cost-effective, and its advanced manufacturing technique helps to reduce leakage current in low-voltage devices. All these features make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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