| Allicdata Part #: | FDD9509L-F085OSTR-ND |
| Manufacturer Part#: |
FDD9509L-F085 |
| Price: | $ 0.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | PT8P 40V LL DPAK |
| More Detail: | P-Channel 40V 90A (Tc) 150W (Tj) Surface Mount D-P... |
| DataSheet: |  FDD9509L-F085 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.35592 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-PAK (TO-252) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tj) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3350pF @ 20V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 70A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDD9509L-F085 is a field effect transistor (FET) in a single package, specifically a N-Channel Enhancement Mode MOSFET. The FDD9509L-F085 is designed for use in high frequency switching applications.
The FDD9509L-F085FET consists of a source, gate and drain, each of which is the connection between two PN junctions. When the gate voltage is applied, a conductive channel is formed in the substrate beneath the gate, giving the FET its enhanced or "depleted" mode of operation. This conductive channel carries current from the source to the drain.
The FDD9509L-F085 can receive any voltage from positive to negative to drive its drain current, but the gate voltage remains low, making it ideal for use in motor controls, signal amplifiers, voltage regulators, and other applications where a low-voltage signal is too noisy. The FET can be used in multiple-stage configurations to reduce noise levels further.
The FDD9509L-F085 is capable of switching high-frequency signals more efficiently than other FETs. The low capacitive gate-drain hopping provides greater noise immunity, resulting in greater compatibility with high-speed systems such as ASICs and other high-performance circuitry.
The FDD9509L-F085 is also designed for easy mounting on circuit boards, simplifying the board design process. Its small size helps reduce the amount of space needed for the device, making it ideal for use in smaller devices. The FDD9509L-F085 is also designed for low on-state resistance, which enables faster switching times and greater power efficiency.
The FDD9509L-F085 is an ideal choice for applications requiring fast switching and high current capability. Its features make it highly compatible with a wide range of circuits, including those with high speed and low noise requirements. Its small size and simplified board design make it an excellent choice for those looking to save space and minimize power consumption in their circuits.
The specific data is subject to PDF, and the above content is for reference
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