Allicdata Part #: | FDD9409L-F085OSTR-ND |
Manufacturer Part#: |
FDD9409L-F085 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | NMOS DPAK 40V 2.6 MOHM |
More Detail: | N-Channel 40V 90A (Tc) 150W (Tj) Surface Mount TO-... |
DataSheet: | FDD9409L-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.49985 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3360pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDD9409L-F085 is a high power MOSFET Transistor and is part of Fairchild Semiconductor\'s FDD9400 series. This series of devices is specifically designed to provide high density and power dissipation applications. The FDD9409L-F085 is a single N-Channel MOSFET and provides high-speed switching performance and low gate charge, making it ideal for achieving maximum power dissipation in high voltage, low-loss applications.
The FDD9409L-F085 has a maximum drain-source voltage rating of 200 V and a drain current of 42.3 A. It is designed to operate at a maximum junction temperature of 175 °C. This device also provides a maximum gate-source voltage rating of 15 V and a continuous drain current of 34 A.
The FDD9409L-F085 is commonly used as power management devices in DC-DC converters, low and high-frequency inverter or inverter, or switching regulator and media filter designs. This device is also suitable for automotive and industrial applications such as power switching Power Factor Correction (PFC) circuits, synchronous buck and boost converters, and high-efficiency isolated DC-DC converters.
The FDD9409L-F085 is a MOSFET and as such its operation is based on the principle of a metal-oxide field-effect transistor (MOSFET). It has an N-Channel MOSFET design with an insulated gate and a source that is connected to the drain. When a voltage is applied to the gate, an electric field is formed, allowing the flow of electrons from the drain to the source. This operation results in a low on-resistance, which is ideal for high-power applications. Furthermore, the FDD9409L-F085 has a low gate charge and is also capable of fast switching speeds.
The FDD9409L-F085 is an ideal choice for high voltage, low-loss applications due to its excellent switching performance. It is also ideal for power management in industrial and automotive applications due to its low on-resistance and low gate charge. Thanks to its simple yet highly effective design, the FDD9409L-F085 is an excellent solution for achieving maximum power dissipation.
The specific data is subject to PDF, and the above content is for reference
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