FDD9411-F085

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	48.4W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1080pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22.5nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	7.8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The FDD9411-F085 is a field effect transistor comprised of two components: a source and a drain which separate two drains and creates two separate source electrodes which create two separate locations with different electrical characteristics. The FDD9411-F085 is typically used as a switching element in various circuit applications. This transistor is an enhancement-mode device which is normally in the “off state” and must be supplied with a minimum voltage level to turn it “on”. When current or voltage is applied to the gate, the MOSFET becomes conductive, allowing current to flow between the source and the drain. In contrast, when the gate voltage is below the threshold voltage level or cut off voltage (VGS cutoff) the MOSFET is in the “off” state and no current can flow. As the voltage applied to the gate varies, the MOSFET can switch between the “on” and “off” states rapidly, allowing voltage to be efficiently regulated with low power consumption. This type of transistor can be used in high-speed switching processes, power supplies, battery charging circuits, data converters, and communications systems.The FDD9411-F085 operates on a drain-source (D-S) principle. A voltage applied to the gate of the FDD9411-F085 results in an electric field that causes an inversion layer to be formed within the surface of the semiconductor material. This inversion layer acts as a switch and enables the current to flow from the source to the drain. The voltage applied to the gate of the FDD9411-F085 is known as threshold voltage (VGS) and it must be greater than the threshold voltage for the MOSFET to attain its fully “on” state. The FDD9411-F085 has very low on-state resistance, which results in high switching speeds. This device is designed for high frequency switching and has a wide range of operating frequencies. The FDD9411-F085 also has a low drain-source capacitance which makes it suitable for high-speed switching applications. The FDD9411-F085 is used in a wide range of applications due to its unique features. It can be used in power electronics, computer and memory systems, communication systems, and other applications where high-frequency switching is required. This device is often used to control power levels in displays and other electronic components. It can also be used in high speed data transfer applications where low on-state resistance and high speed switching performance are required. The FDD9411-F085 can also be used in audio amplifiers, audio and video systems, and various other applications. It is also used as an oscillator circuit for high frequency operation and can be used for various other purposes such as voltage regulators, current source, and digital-to-analog converters.The FDD9411-F085 is a reliable and efficient device which offers low-power switching and high-speed operation. It is capable of operating in extreme environments and works in a wide range of operating temperatures. The FDD9411-F085 does not require any form of external cooling and is ideal for use in space-constrained applications.The FDD9411-F085 is a highly-reliable and cost-effective device and is ideal for a wide range of applications. It is a self-contained device that is easy to use and offers low-power switching and high-speed operation. This field effect transistor is typically used as a switching element in various circuit applications. The operating principle and application field of the FDD9411-F085 make it one of the most widely used transistors today.

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