Allicdata Part #: | FDD9409-F085TR-ND |
Manufacturer Part#: |
FDD9409-F085 |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 90A TO252 |
More Detail: | N-Channel 40V 90A (Tc) 150W (Tc) Surface Mount D-P... |
DataSheet: | FDD9409-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.33127 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3130pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDD9409-F085 is a logic level enhancement-mode Field Effect Transistor (FET) from Fairchild Semiconductor. It is classified as “single” in the FET family and belongs to the category of Metal Oxide Semiconductor Field Effect Transistors (MOSFET). It is ideal for making power switching circuits and commonly used in applications such as switching power supplies, motor control, lighting control and DC-DC conversion.
FDD9409-F085 is designed specifically to handle high current, low voltage applications and offers a high breakdown voltage and low on-resistance. It has an operating temperature range of -55 to +150 °C. It is housed in a Low Profile, Lead Free SOP-8 (Small Outline Package) package that allows for a cost effective and space saving design. The FDD9409-F085 also has a max pulse current capability of 3.8A.
The FDD9409-F085 consists of a N-channel FET as its main component. It works as a switch, opening and closing the current flow through it depending on the gate voltage. When the gate is at 0V or lower, it allows a current to flow from the source to the drain resulting in an on state. When the gate voltage is raised above the threshold voltage or higher, the current flow is prevented and the FET is in an off state. The FDD9409-F085 has a maximum Drain-to-Source voltage of 30V and a maximum Gate-to-Source voltage of ±20V.
FDD9409-F085 also has an “Parasitic” Diode which helps protect the FET from being harmed in negative gate voltages. When a negative voltage tries to pull the gate below the threshold voltage, the N-channel FET is closed and the P-channel parasitic diode is opened allowing the current to bypass the FET. This prevents the FET from operating in the reverse direction and being damaged.
FDD9409-F085 features a Low RDS(on) of 0.38ohm (max), which ensures that its conduction losses are minimized. It also offers a fast switching time of 24ns (typical), making it well suited for high speed switching applications. It is also very robust and can handle high power loads.
FDD9409-F085 is an excellent choice for applications that need high current and low voltage operation. Its robust design and low on resistance make it ideal for a wide range of applications from power supplies, motor control, lighting control, and DC-DC conversion. It offers a wide operating temperature range of -55 to +150 °C, fast switching time and low conduction losses.
The specific data is subject to PDF, and the above content is for reference
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