Allicdata Part #: | FDD9510L-F085-ND |
Manufacturer Part#: |
FDD9510L-F085 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 35V 13A DPAK |
More Detail: | |
DataSheet: | FDD9510L-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.28964 |
Specifications
Series: | -- |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
Description
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FDD9510L-F085 Application Field and Working Principle
FDD9510L-F085 is a N-Channel logarithmic power MOSFET chip designed and manufactured by Fairchild Semiconductor Corporation. It is designed to act as a voltage-controlled current amplifier, allowing the user to adjust the current of the device without needing to adjust the voltage. It has the ability to withstand high power densities, wide range of temperatures, and is highly reliable. The FDD9510L-F085 is used in various applications, including power supplies and motor drives, particularly used in industrial and automotive power systems.Description
The FDD9510L-F085 is a N-Channel power MOSFET chip with a maximum on-state drain-source resistance of 510mΩ and a voltage rating of 32V. It is composed of a monolithic substrate of silicon and is fabricated using a specialized CMOS process. This specialized CMOS process allows for the device to operate with a high degree of accuracy and stability. It is also designed to withstand continuous high power densities, wide temperature range, as well as highly reliable. The FDD9510L-F085 is equipped with two logic pins, and a two-level interlocking gold bond-pad layout which allows for improved solder joint reliability and repeatable mechanical integrity.Advantages
The FDD9510L-F085 has several advantages over similar products. Firstly, the dual logic gate design allows for maximum drive ability and minimal sensitivity to noise. Alongside this, the two log level Gold Bond pad layout allows for optimized solder joint integrity and improved thermal performance. Additionally, its 400kHz switching frequency allows for operation in various medium frequency systems, as well as its high current density enabling it to be used in high-power applications with minimal distortion. Of course, these are only a few of the advantages, but more can be seen as its low RDS, stable gate-source charge, and wide bandgap feature usage.Applications
The FDD9510L-F085 has a wide range of applications due to its features and advantages. It is a great choice for power supplies and motor drives, particularly within industrial and automotive power systems. The FDD9510L-F085 is able to handle large current densities with minimal distortion, meaning it can be used for high power applications with minimal disruption. It is also one of the more common choices for light dimmers and adjustable lighting fixtures due to its wide dynamic range and low wattage usage. Other applications include audio amps, solenoid drivers, cpu/gpu stepping power supplies, as well as various other low-voltage and high-current applications.Working Principle
The FDD9510L-F085 operates similarly to other MOSFETs. When the MOSFET is off, the voltage at the gate-source junction is 0V. As the voltage is increased, the drain current increases exponentially up until the point where the current reaches its maximum level, at which point the device is in saturation. This high level of saturation allows for output voltage to remain constant, even when input voltage fluctuates, allowing for improved power efficiency and reliability. Additionally, the FDD9510L-F085 has a two-level interlocking gold bond-pad layout, which ensures that the welding integrity is maintained even after extended use. This helps to ensure that the device is able to withstand high currents and power ratings without risking it’s operational capabilities.The specific data is subject to PDF, and the above content is for reference
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