FDFMA2P029Z

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	6-VDFN Exposed Pad
Supplier Device Package:	6-MicroFET (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.4W (Tj)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	720pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 4.5V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	95 mOhm @ 3.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.1A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

FDFMA2P029Z is a N-channel MOSFET which is produced by Fairchild Semiconductor. It is a single fet with a very low on-resistance, capable of operating at high frequencies, and with a low gate charge. This MOSFET is used for a wide range of applications and has a variety of features which make it suitable in many situations. In this article we will discuss the application field and working principle of this MOSFET.

Application Field

The FDFMA2P029Z MOSFET is suitable for use in many applications. It can be used in low voltage power supply regulation, power and load switch series applications, and motor control applications. It is also well-suited to be used in electronic transformers, and ASIC designs. Other applications include power management, H-bridge designs, home automation controllers, DC-DC converters, and low power consumption devices. Its high efficiency makes it a great choice for applications which require high power levels, such as automotive and military applications. It is also suitable for applications which involve high current and high voltage, such as power supply regulation, power and load switch series, battery charging and discharging, and AC and DC power supply applications.

Working Principle

The FDFMA2P029Z MOSFET is a single fet with a very low on-resistance. It has a wide range of features which enable it to operate efficiently and safely at very high frequencies. Moreover, its low gate charge makes it ideal for applications where fast switching is required. The MOSFET operates by changing the negative charge of a gate metal-oxide-semiconductor (MOS) capacitor in order to open or close an electrical connection. This is accomplished by controlling the electrostatic gate field. When the gate field is high, the MOSFET is on. When the gate field is low, the MOSFET is off.The gate voltage can be changed by either logic signals or electrical signals. By controlling this gate voltage, the FDFMA2P029Z can be used to switch on or off its load. This switching of the load is done by altering the resistance between the source and the drain terminals.

Conclusion

The FDFMA2P029Z MOSFET is a single fet with a very low on-resistance, capable of operating at high frequencies and with a low gate charge. It is suitable for many applications and can be used in low voltage power supply regulation, power and load switch applications, and motor control applications. It is also well-suited to be used in electronic transformers and ASIC designs. The MOSFET operates by changing the negative charge of a gate MOS capacitor in order to open or close an electrical connection. By controlling the electrical gate voltage, the FDFMA2P029Z can switch on or off its load.

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