FDFME3N311ZT Discrete Semiconductor Products

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The FDFME3N311ZT is a single N-channel MOSFET which utilises a powerFLAT 5×6 leadless package for applications requiring high-speed switching and low on-resistance. Residing within the powerFLAT family, this MOSFET provides max blocking voltages from 20V from 60V with a current through the drain of up to 30A.

As a single N-channel MOSFET, the FDFME3N311ZT features a dedicated source pin which enables current to flow into the N-channel; an insulated gate which acts to control the current flow; and a drain pin which collects the current after passing through the N-channel. This MOSFET is capable of producing a breakdown voltage which is 3-5 times that of a p-channel MOSFET and produces a lower on-resistance when compared to equivalent p-channel MOSFETs.

In terms of powerFLAT 5×6 leadless package applications, the FDFME3N311ZT is a widely used component thanks to its range of availability. Its wide voltage and current capability is especially useful for high-end switching applications such as photovoltaic DC/DC converters, robot controllers and battery management systems. Furthermore, due to its low on-resistance, the FDFME3N311ZT is also useful for applications such as power conditioners and DC/DC converters.

With regards to its working principle, the FDFME3N311ZT utilises an appropriately biased insulated gate that controls the conductance of the N-channel. When the gate is negatively charged, it attracts the majority carriers in the N-channel and forces them to move towards the drain, thus creating an inversion layer which increases the channel mobility. This drastically lowers the device channel resistance, allowing current to flow freely in the N-channel and via the source and drain pins.

When correctly chosen and utilised, the FDFME3N311ZT is capable of providing the user with very low RDS(on) values, further lower energy loss during the switching process with low conduction losses. Keeping this in mind, this MOSFET is capable of achieving an approximately 99% conversion efficiency from input to output at full load conditions, thus minimising wastage.

In conclusion, the FDFME3N311ZT is a single N-channel MOSFET with great applicability thanks to its powerFLAT 5×6 leadless package. This MOSFET provides a wide range of voltages and currents with a low on-resistance, making it suitable for high-end switching applications such as robot controllers and power conditioners. Its working principle relies on an insulated gate that controls the current along the N-channel, allowing for low RDS(on) values, low conduction losses and excellent conversion efficiency.

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