| Allicdata Part #: | FDFMA3N109FSTR-ND |
| Manufacturer Part#: |
FDFMA3N109 |
| Price: | $ 0.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 2.9A MICRO2X2 |
| More Detail: | N-Channel 30V 2.9A (Tc) 1.5W (Ta) Surface Mount 6-... |
| DataSheet: |  FDFMA3N109 Datasheet/PDF |
| Quantity: | 6000 |
| 1 +: | $ 0.22000 |
| 10 +: | $ 0.21340 |
| 100 +: | $ 0.20900 |
| 1000 +: | $ 0.20460 |
| 10000 +: | $ 0.19800 |
Specifications
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | 6-VDFN Exposed Pad |
| Supplier Device Package: | 6-MicroFET (2x2) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | Schottky Diode (Isolated) |
| Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 123 mOhm @ 2.9A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2.9A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The FDFMA3N109 MOSFET is a high voltage N-channel MOSFET transistor manufactured by Fairchild Semiconductor, a leading supplier of discrete power semiconductors. The FDFMA3N109 device is capable of switching high levels of voltage and current, making it an excellent choice for a variety of applications. In this article, we will discuss the application fields and working principle of the FDFMA3N109 MOSFET.The FDFMA3N109 is a versatile power semiconductor that can be used in a variety of applications. Due to its high voltage and current capabilities, it can be used in high power switching applications, such as motor control and power supplies. It can also be used in more sensitive applications, such as automotive computers and telecommunications equipment. Its low threshold voltage and fast switching time make it an ideal choice for these types of applications.The working principle of the FDFMA3N109 is based on a basic MOSFET design. It is composed of three distinct parts: a gate, a source and a drain. The gate acts like a switch, allowing the switch to be opened or closed. The source and drain are the outputs of the switch, and this is where the voltage or current is transferred. In the FDFMA3N109, the gate is controlled by a voltage, and when this voltage is applied to the gate, it causes a change in the current across the source and drain.The FDFMA3N109 offers several advantages over other MOSFETs. It has a low threshold voltage, meaning that it can switch quickly and efficiently. Additionally, its fast switching time makes it ideal for high power applications. It also has low on-state resistance and high power dissipation capability, making it more efficient than many other MOSFETs.The FDFMA3N109 is an excellent choice for high current and voltage applications. It is suitable for applications ranging from motor control to power supplies and communications. With its high voltage and current capabilities and low on-state resistance and fast switching time, the FDFMA3N109 is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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