FDFMA2P859T Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.3V @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	MicroFET 2x2 Thin
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.4W (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	435pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	120 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The FDFMA2P859T is a single, N-channel MOSFET (metal-oxide-semiconductor FET) from Fairchild Semiconductor. As a type of transistor, it is designed to switch or amplify electrical signals. It is commonly used in applications such as switching, amplification, and voltage regulating for various commercial, industrial and consumer products.The FDFMA2P859T is a cut-off MOSFET with an on-resistance of 0.62ohms and a drain-source breakdown voltage of 60V . It has a drain current rating of 6A and a maximum power dissipation rating of 20W. The FDFMA2P859T is available in an 8-lead TO-252-2 package. The operating temperature range is -55 °C to +150 °C.The working principle of the FDFMA2P859T is fairly simple. When a given voltage (VGS) is applied to the gate, it induces a conductive channel between the source and drain terminals. It is a common on-off switch; when the voltage is applied to the gate, current flows between the source and drain terminals, and the device is turned on; when no voltage is applied, a boundary region appears in the channel, and the device is turned off.The FDFMA2P859T can be applied in various situations. With its low on-resistance and high current rating, it is suitable for high power applications such as AC/DC motor controllers, DC/DC converters, and switched-mode power supplies. For motor control, the FDFMA2P859T can be used to switch currents up to 6A DC. In addition, the device is useful in home and commercial appliances, lighting and dimming control, and LED driver applications.Due to its high switching speed, the FDFMA2P859T is also a suitable device for RF radio applications. It can be used in RF amplifiers, RF switches, and low-noise preamplifiers, as well as in telecommunications equipment.The FDFMA2P859T is a solid-state transistor, with an inherent advantage of being extremely reliable over long-term use. Its low on-resistance and robust package make it an attractive choice for various applications. In addition, it is suitable for use in various voltage levels since it can handle up to 60V. Its simple operating principle and good electrical performance make it a dependable choice for many electronic designs.

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