FDFMA2P853T Discrete Semiconductor Products |
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Allicdata Part #: | FDFMA2P853TTR-ND |
Manufacturer Part#: |
FDFMA2P853T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 3A 6-MICROFET |
More Detail: | P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount Micr... |
DataSheet: | FDFMA2P853T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | MicroFET 2x2 Thin |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 435pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDFMA2P853T is a commonly used MOSFET with a single component. It is a perfectly designed component suitable for a variety of applications, such as power management, circuit protection, switched-mode power supply, and more. Starting with a brief introduction of the technical aspects and application field of FDFMA2P853T, this article will further analyze its working principle and application field.
FDFMA2P853T is an N-channel enhancement mode MOSFET, meaning it can be used with both reverse and forward biasing. It has a drain-source voltage rating of 200V and a drain source voltage rating of 100V. Its total gate charge is 31.5nC-34.5nC and its channel width-length ratio is 853:1. The FDFMA2P853T is designed to handle more than 8A current and has a high speed switching capability due to its low gate threshold voltage. It is a very versatile component and can be used in various kinds of high power applications.
FDFMA2P853T has a simple working principle; it is essentially an electronic switch that is used to control the flow of current through another component or a circuit. When the gate voltage of the MOSFET is increased, the states of the MOSFET change from enhancement mode (off) to depletion mode (on). In the enhancement mode, there is no current flowing between drain and source as the MOSFET is turned off. When the voltage of the gate is increased, the barrier between drain and source decreases, changing the MOSFET to the depletion mode and allowing current to flow through the component. This is the basic working principle of any type of MOSFET.
The FDFMA2P853T is suitable for a wide range of applications including, power management, circuit protection, switched mode power supplies, DC/DC converters, audio amplifiers, and so on. This component is perfect for these kinds of applications because of its low gate threshold voltage and moderate current handling capability. It is also an ideal choice for high speed switching applications as it has a switching time as low as 160ns-185ns.
FDFMA2P853T has a wide range of applications and is a very versatile component. It is suitable for use in high power applications and can handle more than 8A current. Its low gate threshold voltage makes it ideal for high speed switching applications. All in all, FDFMA2P853T is an ideal choice for any application that needs high power, circuit protection, and fast switching.
The specific data is subject to PDF, and the above content is for reference
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