FDFMA2P857 Allicdata Electronics

FDFMA2P857 Discrete Semiconductor Products

Allicdata Part #:

FDFMA2P857TR-ND

Manufacturer Part#:

FDFMA2P857

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 3A MICROFET2X2
More Detail: P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount 6-Mi...
DataSheet: FDFMA2P857 datasheetFDFMA2P857 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FDFMA2P857 is an enhancement-mode MOSFET (metal oxide semiconductor field effect transistor). The product was developed by Microchip Technology, a designer, manufacturer and provider of semiconductor products. The FDFMA2P857 is a dual-channel MOSFET that has low on-resistance and low gate-charge ratings. It offers high switching speeds and low gate drive requirements.

The FDFMA2P857 has a maximum drain current rating of 8A (continuous) and can handle peak currents of up to 10A. Its on-state resistance is rated at 15 mΩ. The product has a drain-source voltage rating of 60V and a gate-source voltage rating of ± 20 volts. It has an operating temperature range of -55°C to +150°C.

The FDFMA2P857 is suitable for use in a variety of applications including power management, switched-mode power supplies (SMPS), motor controllers, DC/DC converters and more. It is also commonly found in consumer electronics such as laptops, tablets, smartphones and other devices.

The working principle of the FDFMA2P857 is based on the metal oxide semiconductor field effect transistor (MOSFET) technology. A MOSFET is a transistor that uses an insulated gate to control current in a conductor. The FDFMA2P857 uses a metal gate as the insulated gate. When the gate voltage is applied, a channel is created between the source and drain terminals. This allows current to flow through the device. The resistance of the channel is determined by the voltage applied to the gate and the amount of current flowing through it.

As the gate voltage is increased, the resistance of the channel decreases, allowing more current to flow. This is known as enhancement-mode operation. Conversely, if the gate voltage is reduced, the resistance of the channel increases, allowing less current to flow; this is known as depletion-mode operation.

The FDFMA2P857 also offers reverse-mode protection, which prevents it from being damaged by reverse voltages and excess current. It also features a built-in temperature sensor to monitor the device\'s temperature, enabling safe operation.

The FDFMA2P857 is an excellent choice for applications requiring high switching speeds, low on-resistance, low gate drive requirements and reverse-mode protection. It is capable of handling up to 10A peak currents with a 15 mΩ on-state resistance. Its wide operating temperature range and built-in temperature sensor makes it ideal for use in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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