
FDS5170N7 Discrete Semiconductor Products |
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Allicdata Part #: | FDS5170N7TR-ND |
Manufacturer Part#: |
FDS5170N7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 10.6A 8-SOIC |
More Detail: | N-Channel 60V 10.6A (Ta) 3W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2889pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A FDS5170N7 is part of a family of advanced n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) developed for low-voltage, low-power applications. It is a single, complementary metal-oxide-semiconductor (CMOS) transistor with an operating voltage of 14V and a device dissipation of 0.15 W. It is primarily designed for consumer products such as computers and tablets and is used in audio amplifiers, computer peripherals, and portable devices.
The FDS5170N7 is a single, complementary metal-oxide-semiconductor FET (CMOS FET) designed to be used in systems where low power is required. It features a low RDS (ON) of 45mΩ and high switching speed, making it suitable for high-frequency switching applications such as power amplifiers, audio amplifiers, power supplies, and other consumer electronics. Its low input capacitance further adds to its appeal for low-power/low-voltage applications.
The FDS5170N7 works on the principle of metal-oxide-semiconductor field-effect transistors (MOSFETs). These devices use a gate and a drain to modulate the flow of electrons between the source and the drain. By applying a voltage at the gate, the electron flow between the source and the drain is increased or decreased, in effect controlling the current that passes through the circuit.
In the FDS5170N7, the gate is formed by two metal-oxide layers – a thicker layer of anodic aluminium oxide and a thinner layer of silicon dioxide. These layers are sandwiched between two metal plates, one of which is the source and the other the gate. A positive voltage applied to the gate creates a positive electric field, which attracts electrons and effectively changes the resistance of the channel. This gate voltage adjusts the current flowing through the device and hence, controls the output of the device.
The FDS5170N7 is widely used in consumer electronics, such as computers and tablets, audio amplifiers, and portable devices. They are also often used in robots in industrial automation, as well as in power supplies for circuits, such as for medical equipment. The device has a low on resistance and a high switching speed, making it suitable for use in high-frequency switching applications such as power amplifiers and audio amplifiers. Its low input capacitance further adds to its appeal for these applications.
The FDS5170N7 is an advanced, low-voltage, low-power metal–oxide–semiconductor field-effect transistor (MOSFET) specifically designed for consumer applications. It features a low RDS (ON) of 45mΩ, allowing it to be used in high-frequency switching applications such as power amplifiers and audio amplifiers. Its low input capacitance further adds to its appeal for low-power/low-voltage applications. It is typically used in audio amplifiers, computer peripherals, and portable devices.
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