FDS5690-NBBM009A Discrete Semiconductor Products |
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Allicdata Part #: | FDS5690-NBBM009ACT-ND |
Manufacturer Part#: |
FDS5690-NBBM009A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 7A 8SOIC |
More Detail: | N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO |
DataSheet: | FDS5690-NBBM009A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1107pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Cut Tape (CT) |
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The FDS5690-NBBM009A is a SuperFET II Power MOSFET device manufactured by ON Semiconductor. This power MOSFET is a N-channel device, with a maximum voltage rating of 100V, a drain current rating of 4A, and a RDS-on of 0.0075Ω. It also has an inherently robust dual die structure that enables superior thermal performance when compared to conventional single die MOSFETs.
The FDS5690-NBBM009A MOSFET is commonly used in applications such as portable electronics, automotive audio, and motor control. It is also frequently used as an efficient, low-voltage switch for controlling higher power levels due to its low on-resistance and high current capability. Furthermore, its small footprint and compact size make it suitable for applications where space is limited.
The working principle of the FDS5690-NBBM009A MOSFET is based on Field Effect Transistor (FET) technology. At its most basic level, a MOSFET consists of a source, a drain, and a channel between them, through which the current flows when a gate voltage is applied. This gate voltage causes the formation of a channel of negatively charged electrons, which in turn, controls the flow of current. When the gate voltage is removed, the channel disappears and the MOSFET will be turned off.
The FDS5690-NBBM009A SuperFET II device also features a built-in Gate-Source ESD protection, which ensures that the MOSFET operates safely in the occurrence of electrical surges and electrostatic discharge. Furthermore, the FDS5690-NBBM009A is a RoHS compliant, AEC-Q101 qualified device, helping to ensure that it operates in compliance with international safety standards.
The FDS5690-NBBM009A MOSFET is a powerful, compact, and dependable solution for controlling and switching higher power levels. With its low on-resistance, high current capability, and inherent robust dual die structure, it can provide reliable and efficient performance for even the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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