FDS5690

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The FDS5690 is a powerful dual channel enhanced N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with high-side and low-side switches used as a universal protection device in automotive, consumer electronics and telecom/datacom applications. The FDS5690 is designed to provide overcurrent, overvoltage and overtemperature protection, providing a low RDSon with a fast switching time due to a maximum gate charge of only 26 nC (nano coulomb).

Application Field and Working Principles of FDS5690

FDS5690 is used mainly for automotive, consumer electronic equipment and telecom/datacom applications. Automotive uses of FDS5690 include motor control, HVAC, automotive driver and passenger infotainment systems, dark current management and high-side illumination applications. Consumer electronic applications of the FDS5690 include DC/DC converters, switching regulators, power factor correction (PFC) controllers, and fan controllers. Networking and telecommunication applications include routing and switching, Ethernet, internet of things (IoT) applications, and server and storage equipment. FDS5690 is a good choice for any system that requires fast turn-on/off switch with high load margin, low gate charge and low voltage drop. This makes it ideal for high frequency circuits.

In terms of its working principle, FDS5690 features an Enhanced N-Channel MOSFET which has two channels, the high side and low side switches. The high side switch is responsible for providing a low impedance connection for current flows from the power source to the load. The low side switch is responsible for providing a low voltage drop from the load to ground. This dual channel design allows for efficient protection from overcurrent, overvoltage and overtemperature. Furthermore, the FDS5690 features a maximum gate charge of only 26 nC, which allows for a fast switching time.

In addition to its dual N-Channel design, FDS5690 also features a temperature compensated depletion voltage in order to provide accurate current sensing and enhanced reliability. Moreover, the FDS5690 also features a reverse biased avalanche breakdown which helps protect the FDS5690 from damaging surge events in the system.

The FDS5690 also performance on other levels as well. Its high load current capabilities of 25A are capable of meeting high power requirements as well. This also makes it a great choice for high frequency circuits that require a fast switching element. FDS5690 is also capable of providing a low voltage drop, making it ideal for systems that are sensitive to power loss. Moreover, FDS5690 is an AEC-Q-101-qualified device, making it suitable for automotive applications under harsh conditions.

As a result, FDS5690 is a powerful dual channel enhanced N-Channel MOSFET. Its features make it an ideal choice for automotive, consumer electronic, and telecommunication applications. The FDS5690 provides reliable protection from overcurrent, overvoltage, and overtemperature, as well as fast switching speeds and low voltage drops ensuring efficient operation and power loss minimization. It qualifies AEC-Q-101-qualified, providing reliable operation and protection under harsh conditions.

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