FDS5680

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The FDS5680 is a high-voltage, high-current, high-speed N-channel enhancement mode power MOSFET. It is designed to provide excellent ruggedness and continuous drain current of up to 10A. It is specifically designed for switch-mode power supplies, motor drives and server DC/DC converters. It has a wide range of features including small gate charge and low gate output resistance, positive temperature coefficient, integrated gate protection, and reduced on-resistance. This article will discuss the application fields and working principle of the FDS5680 power MOSFET.

Application Field of FDS5680

The FDS5680 power MOSFET is used in many applications. It is ideal for high-performance switching power supplies and is used in a variety of applications such as power amplifiers, electric motors, and battery charging systems. The FDS5680 can also be used in portable devices such as mobile phones, tablets, and laptop computers, as well as in automotive and industrial applications.

The FDS5680 can be used in a variety of applications such as DC-DC converters, motor drivers, and switching power supplies. It has a low on-resistance, high-current capability, and easy gate drive that make it suitable for these applications. It can be used to switch loads up to 10A and can handle up to 600V. It is also suitable for multiplexer applications due to its high speed and low charge injection. Additionally, it provides excellent noise immunity and ESD protection.

Working Principle

The FDS5680 power MOSFET works on the principle of voltage-controlled current flow, which is based on the use of a gate-source voltage to control the current flow through the drain to source pins. The device is equipped with an integrated protection circuit that includes both a high-current limiting and a low-current limiting feature. This protection circuit allows the device to be used in a variety of applications, including switch mode power supplies and multiplexer applications, where high current spikes are common.

When the gate-source voltage is applied, the voltage at the gate-source junction creates a field that induces the electrons to move toward the drain. This flow of electrons creates a current that follows the path from source to drain. The current is proportional to the voltage across the gate-source junction and is controlled by the amount of voltage applied to the gate. When the gate-source voltage reaches the threshold voltage (Vgs(th)), the drain source current reaches its maximum value.

The FDS5680 is designed to operate with a gate-source voltage of between 10V and 600V. The device is capable of withstanding high-drain-to-source voltages up to 600V, allowing for the high voltage operation necessary for switch-mode applications. Additionally, the device has an integrated gate protection circuit which limits the maximum gate current to a safe value, protecting the device from excessive voltage stress. This integrated protection circuit also helps reduce output capacitance, providing both improved switch-mode performance and improved power factor correction.

Conclusion

The FDS5680 power MOSFET is an ideal solution for high-performance portable and automotive applications, as well as industrial and consumer electronics. It is a high-voltage, high-current, high-speed N-channel enhancement mode power MOSFET, with a wide range of features including small gate-charge, low gate output resistance, and positive temperature coefficient. It has an integrated gate protection circuit and is suitable for multiplexer applications due to its high speed and low charge injection. Furthermore, its low on-resistance and wide operating temperature range make it suitable for different applications.

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