FDS5682 Discrete Semiconductor Products

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The FDS5682 is a single N-channel shielded Gate Field-Effect Transistor (FET) from the SmartPower MOSFET family. This device has an impressive performance to size ratio, and its low on-resistance makes it ideal for use in applications such as DC-DC converters, consumer electronics, and motor control circuits. In this article, we will discuss the application fields and working principle of the FDS5682.

Application Fields and Uses

The FDS5682 is designed to be used in applications where an efficient, small footprint, and low on-resistance are desired attributes. It features a low Qg (gate charge) and low Rdson (drain-to-source on-resistance). This makes it suitable for a variety of power management applications such as DC-DC converter circuits, battery management systems, and motor control circuits. Additionally, its small footprint makes it a suitable choice for consumer electronics applications.

Device Architecture

The FDS5682 is a Single N-channel shielded-gate FET. As such, it comprises a source and drain terminal, with a gate terminal connected to the center of the device (see figure 1). The source and drain are connected to the DRAIN region of the FET, while the gate terminal is connected to the GATE region. The SHIELD terminal is an optional terminal that may be connected to reduce gate-to-drain capacitance and improve the performance of the device.

The single-channel FET architecture also provides protection against overvoltage and protection against electrostatic discharge (ESD), as it allows for current-limiting control. Additionally, the shielded gate architecture of the FDS5682 increases the device’s immunity to both high-frequency noise and latchup.

Working Principle

The FDS5682 works using a combination of capacitance and voltage phenomena. The device has two terminals, a gate and a drain. When a voltage is applied to the gate terminal, a current flows into the gate and causes a change of potential between the gate and the drain. This causes the electrons in the gate to become excited and move inwards, creating an “inversion layer” of conductive electrons.

The inversion layer is then able to allow current to flow between the source and the drain, depending on the drain voltage. This is known as the “channel” and it is a key controlling factor for the device’s conduction properties. If a larger voltage is applied to the drain, the channel expands and more current can flow. This phenomena is known as body biasing, e.g. the bias of the drain voltage in relation to the gate voltage.

The FDS5682 also makes use of capacitance – as the gate voltage changes, the capacitance between the gate and the drain changes, resulting in a change in the conduction of the device. This is referred to as “gate control” and occurs due to the “punch-through” effect of the inversion layer.

Conclusion

The FDS5682 is single N-channel shielded-gate FET. It works using a combination of capacitance and voltage phenomena, and its low on-resistance and small size make it ideal for use in power management applications such as DC-DC converters, motor control circuits, and consumer electronics. It features a low gate charge and high immunity to both high-frequency noise and ESD, as well as protection against overvoltage.

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