FDS5672_F095 Allicdata Electronics
Allicdata Part #:

FDS5672_F095-ND

Manufacturer Part#:

FDS5672_F095

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH
More Detail: N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-S...
DataSheet: FDS5672_F095 datasheetFDS5672_F095 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDS5672_F095 Application Field and Working Principle

FDS5672_F095 is a field effect transistor (FET) type device and belongs to a category of devices called metal-oxide-semiconductor field effect transistors (MOSFETs). Due to its superior characteristics, such FDS5672_F095 has rapidly grown in popularity in the field of electronics, finding applications in many areas.

Generally, MOSFETs comprise the gate and drain/source terminals. The gate terminal is usually made of some oxidation-resistant metal which has an electric charge applied to it in order to control the electric current through the drain/source terminal. In FDS5672_F095, the gate terminal is made of aluminum and the drain/source terminal is composed of n-type silicon.

As a single MOSFET, FDS5672_F095 is best suited to act as a power switch, controlling the flow of current through a given circuit with greater precision than a traditional bipolar junction transistor (BJT). The device is particularly well-suited for digital signal processing applications because of its fast switching times and relatively low resistance across the gate terminal.

The working principle of FDS5672_F095 is based on the phenomenon of electron flow. When a charge is applied to the gate of the MOSFET, the surface of the n-type semiconductor region near the gate becomes temporarily negative and so electron flow is allowed to pass through the surface of the device. This allows current to be diverted through the device, depending on the magnitude of the charge applied to the gate, which is analogous to a voltage signal.

The physical configuration and implementation of FDS5672_F095 makes it particularly useful in applications where fast switching times are needed or low power consumption is desired. For example, it is particularly useful in low-power audio electronics or analog signal processing, as it provides a low-cost, power efficient means to control the flow of current.

The device can also be used to control the flow of current in complex digital signal processing applications, as well as more basic power control applications. For example, it has been used in motor control applications to enable accurate step-by-step control of the motor speed. Other common applications include low-power RF signal control and turn-on/shut-off sequencing.

In addition to its power control capabilities, FDS5672_F095 also offers a great deal of value for analog signal processing applications. It can be used to accurately control the flow of low-level analog signals, as well as higher voltages and currents. Moreover, the device operates at a much lower voltage than other power switches, making it a popular choice for audio and data networks.

Due to its wide range of applications, FDS5672_F095 has become a popular choice for electronics designers and engineers. Its fast switching times, low resistance, and high energy efficiency have firmly established it as a key component in many modern electronics applications. Furthermore, its growing popularity is further bolstered by its low cost and ease of use.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDS5" Included word is 10
Part Number Manufacturer Price Quantity Description
FDS5692Z ON Semicondu... -- 1000 MOSFET N-CH 50V 5.8A 8-SO...
FDS5672_F095 ON Semicondu... 0.0 $ 1000 MOSFET N-CHN-Channel 60V ...
FDS5680 ON Semicondu... -- 1000 MOSFET N-CH 60V 8A 8-SON-...
FDS5670 ON Semicondu... -- 12500 MOSFET N-CH 60V 10A 8-SOI...
FDS5690 ON Semicondu... -- 2500 MOSFET N-CH 60V 7A 8SOICN...
FDS5170N7 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 10.6A 8-S...
FDS5351 ON Semicondu... -- 10000 MOSFET N-CH 60V 6.1A 8-SO...
FDS5690-NBBM009A ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 7A 8SOICN...
FDS5672 ON Semicondu... -- 5000 MOSFET N-CH 60V 12A 8-SOI...
FDS5682 ON Semicondu... -- 1000 MOSFET N-CH 60V 7.5A 8-SO...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics