FDS5692Z Discrete Semiconductor Products |
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Allicdata Part #: | FDS5692ZTR-ND |
Manufacturer Part#: |
FDS5692Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 5.8A 8-SOIC |
More Detail: | N-Channel 50V 5.8A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | FDS5692Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1025pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 5.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDS5692Z is a N-Channel CoolMOS Power Transistor from Infineon Technologies. It is a high-voltage MOSFET, suited for use in power management applications in power switching systems. The device is suitable for both switch mode and linear applications, and is optimized for high frequency operation. It is designed for use in high power and low noise switching mode power converters for both consumer and automotive applications, such as DC-DC converters, battery chargers, LED lighting and power supplies.
The FDS5692Z is a compact, low-loss, high-bandwidth MOSFET. It has an improved RDS(ON) that provides a low drain-source on-resistance with very low threshold voltage and low gate drive power. It is designed to be used in high-speed circuit applications operating at frequencies up to 4GHz, and for operation in high-voltage applications up to 100V.
The FDS5692Z has different packages available, including a TO-220, TO-220F and optional PDIP. It has an operating temperature range of -40 to +150 ˚C, and has an internal thermal protection feature that limits the junction temperature to 150 ˚C. For enhanced damping, the device includes an internal diode. This diode provides capacitive damping of the drain signal, reducing EMI and protecting against ringing.
The FDS5692Z works by using the principle of FET operation. When a voltage is applied between the gate and source of the device, a small electric field is created which modifies the conductivity of the channel between the source and drain, allowing current to flow from the source to the drain. The FDS5692Z has a low on-resistance, which allows for high-efficiency power switching, lower heat loss and high-frequency operation. It also has a low gate drive voltage, which improves the efficiency of the device at high switching frequencies.
The FDS5692Z is used in a variety of power management applications in power switching systems. It is suited for power conversion, motor control, DC-DC converters, LED lighting and power supplies. It can also be used in voltage regulation and power distribution applications. The FDS5692Z is a robust and reliable device, making it suitable for many high-voltage applications.
In conclusion, the FDS5692Z is a high-voltage MOSFET, optimized for high frequency operation, suitable for both switch mode and linear power applications. It is a compact, low-loss, high-bandwidth device, offering low on-resistance, low gate drive voltage, and enhanced damping with an internal diode. The FDS5692Z is suitable for use in a variety of power management applications in power switching systems, and is particularly suited for high-speed circuit applications operating up to 4GHz.
The specific data is subject to PDF, and the above content is for reference
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