Allicdata Part #: | FJNS3203RTA-ND |
Manufacturer Part#: |
FJNS3203RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92S |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJNS3203RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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The FJNS3203RTA is a type of semiconductor known as a single pre-biased bipolar junction transistor (BJT). It is most often found in consumer electronics, automotive, industrial and military applications due to its ability to withstand high voltages and temperatures. The technology behind the transistor is based on two junctions of semiconductor material, and its electrical properties can be manipulated by controlling the flow of current between them.
In the FJNS3203RTA, one of the junctions is pre-biased to reduce the collector-base voltage. This enables the transistor to operate more efficiently at high operating temperatures as it requires less energy to control the current between the junctions. This can be particularly beneficial in applications where thermal energy management is important, such as automotive or military applications. An important factor when working with FJNS3203RTA transistors is that the device must be properly biased in order to work properly. If it is not biased correctly, the transistor can be damaged or produce erratic or noisy performance.
The basic principle behind the FJNS3203RTA transistor is the same as other transistors. It consists of a base, an emitter and a collector. The base is the electrode through which current is applied to the transistor, and the collector and emitter are then connected to external circuitry. The transistor uses current between the base and the collector to control current from the emitter to the collector.
The transistor\'s current gain, or amplification, is determined by the ratio between the collector current and the base current. This ratio is called the hFE parameter and is typically determined by the transistor manufacturer. The current gain helps determine the efficiency of the transistor as well as its frequency response.
The FJNS3203RTA transistor has found applications in a wide variety of uses due to its various features. It can be used in a variety of electrical circuits, including switching circuits, amplifiers, power regulators and pulse circuits. It is also used in the development of various electronic components, such as integrated circuits, amplifiers and oscillators.
The FJNS3203RTA transistor is an important component in many of today\'s consumer electronics, automotive, industrial and military applications. Its ability to withstand high temperatures and voltages make it an ideal choice for projects where reliability, performance and efficiency are key. With the widespread availability of transistors, the FJNS3203RTA is sure to continue to be a popular choice among engineers and designers.
The specific data is subject to PDF, and the above content is for reference
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