FJNS4205RTA Allicdata Electronics
Allicdata Part #:

FJNS4205RTA-ND

Manufacturer Part#:

FJNS4205RTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 300MW TO92S
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJNS4205RTA datasheetFJNS4205RTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Description

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The FJNS4205RTA transistor is a single pre-biased, bipole (BJT) transistor from the Fairchild Semiconductor family of components. This type of component has a wide range of applications, and it is important to understand the basic principles of how the component works and what factors influence its performance. In this article we will explain the working principle of the FJNS4205RTA transistor, its application fields, and the factors that influence its performance.

The common base type BJT is the basic structure used for the FJNS4205RTA transistor. This type of transistor includes two p-type semiconductors and one n-type semiconductor that form two junctions in a layered construction. The middle layer of the BJT is the base region and the other two layers are the emitter and the collector. The base region is pre-biased in the FJNS4205RTA, which means that there is already a voltage present when the device is off.

In operation, the FJNS4205RTA is connected to a source of power and when appropriate conditions are met, current is allowed to pass through the base. This process is regulated by the applied voltage. When the applied voltage is increased, more current is allowed to pass through the base region. When the applied voltage is decreased, less current is allowed to pass through the base region. This is the basic principle of operation for the FJNS4205RTA transistor.

The FJNS4205RTA transistor has a wide range of application fields, including power management, automotive, lighting, and industrial control. In power management applications, the transistor can be used to regulate the flow of current in order to control power levels. In automotive applications, it can be used as an amplifier or to control the speed of a motor. In lighting applications, it can be used as an on/off switch to control the brightness of a light. In industrial control applications, it can be used to control the speed of a motor or to switch a circuit on or off.

The performance of the FJNS4205RTA transistor is influenced by a number of factors. This includes the temperature of the environment, the applied voltage, and the current levels. The temperature of the environment can affect the performance of the transistor as temperature extremes can cause the transistor to become less efficient. Similarly, if the voltage is too low or too high, the transistor will not be able to perform optimally. The current levels must also be carefully controlled to ensure the best performance from the transistor.

In conclusion, the FJNS4205RTA is a single pre-biased bipolar junction transistor from the Fairchild Semiconductor family of components. It has a wide range of applications and its performance can be influenced by factors such as temperature, applied voltage, and current levels. Understanding the basic principles of operation and the factors that influence the performance of the transistor is important in order to get the most out of the FJNS4205RTA transistor.

The specific data is subject to PDF, and the above content is for reference

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